Abstract:The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the dominant force in highfrequency solid-state power amplifiers (PAs) both in base stations of wireless communication and T/R modules of radar. GaN HEMT devices exhibit high power densities coupled with high breakdown voltages, and have opened up the possibilities for highly efficient PAs exploiting the principles of waveform-engineered designs. Due to the fast development and maturation of the process, GaN HEMT technology has become a major enabler for both very broadband high-PAs and very high-efficiency designs. At the same time, the accurate large-signal models for both discrete transistors and monolithic microwave integrated circuit foundry are highly desirable to ensure high performance and first-pass success design of GaN circuits. This special issue focuses on the current state of the art of GaN HEMT device modeling consisting of physicalbased model and behavioral-based model. Broadband and energy-efficient microwave devices and circuits are included in this special issue. Papers dealing with GaN HEMT models, high efficiency power amplifier and transmitter design methodologies based on GaN HEMT device, GaN based MMIC design, related to potential practical applications, were solicited. In this special, we have accepted 9 papers after peer review, which cover the topics of GaN HEMT device modeling, GaN based circuit design as well as linearization techniques. Accurate modeling of GaN device is the basis for sucessful design, 5 papers about this topic are included in this issue such as “Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study”, “Bayesian Inference Based Small-Signal Modeling Technique for GaN HEMTs”, “Pulsed I/V and S-parameters Measurement System for Isodynamic Characterization of Power GaN HEMT Transistors”, “Thermal Analysis of Microwave GaN-HEMTs in Conventional and Flip-Chip Assemblies”, “Low complexity Output Generalized Memory Polynomial model for Digital Pre-Distortion of RF Power Amplifiers”. Furthermore, 4 papers about GaN circuits design are also accepted in this issue including “18 -31GHz GaN Wideband LNA Using a 0.1μm T -Gate HEMT Process”, “Investigation of Load Modulated Inverse Class -F Power Amplifier With Extended Conduction Angle”,” A Post -Matching Concurrent Dual -Band Doherty Power Amplifier with Enhanced Bandwidth”, “A Wideband Two-Stage Doherty Power Amplifier at high Back-off by Exploring Feasible Design Space” . The broad range of GaN HEMT modeling and circuits are explored in this special issue testifies the vibrant research activity and commercial interest on innovative GaN HEMT devices and circuits to address the consequent engineering challenges.

GaN device and modeling with emphasis on trapping effect and thermal challenges for PA design (Invited)

Large-signal modeling of GaN devices with emphasis on trapping effect and thermal challenges (Invited)

Thermal modeling, analysis, and management of high-power GaN transistors

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

Analysis of trapping effect in GaN HEMT modeling

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Special Issue on GaN HEMT Modeling and Circuits

Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

Electro-Thermal Co-Optimization Design of GaN MMIC PA

A GaN HEMT Integrated Power Module with Silver Sintering Processes

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

A large signal scaling model of high power GaN microwave device

Thermal Simulations of 3-D Integrated Multi-Chip Module with GaN Power Amplifier and Si Modulator

Characterization and Modeling of Frequency-Dependent On-Resistance for GaN Devices at High Frequencies

Design and fabrication of a GaN HEMT power amplifier based on hidden Markov model for wireless applications

Inverse Piezoelectric and Trap Effects with Temperature Dependence in AlGaN/GaN HEMTs under Narrowband Microwave Pulses

GaN Based Vertical Transistors on GaN Substrates

Study of Thermal Simulation Technology for GaN Power Devices

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

GaN-on-silicon devices and technologies for RF and microwave applications