Thermal Simulations of 3-D Integrated Multi-Chip Module with GaN Power Amplifier and Si Modulator

Travis Anderson,F. Ren,Lance Covert,Jenshan Lin,S. J. Pearton

DOI: https://doi.org/10.1149/ma2005-02/18/717

2006-02-17

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Thermal modeling, analysis, and management of high-power GaN transistors

Wensheng Zhao,Sensen Li,Rui Zhang,Wenyan Yin

DOI: https://doi.org/10.1109/EDAPS.2013.6724434

2013-01-01

Abstract:A thermal circuit model for high power GaN transistor is constructed in this paper. Based on this model, the temperature rise in GaN transistor can be fast captured accurately. Further, the graphene layer is inserted below GaN layer to serve as heat spreader. It has been demonstrated that by introducing graphene layer, the maximum temperature rise of GaN transistor can be effectively suppressed, and its performance and reliability can be thereby improved.
Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

R. Zhang,W. S. Zhao,W. Y. Yin

DOI: https://doi.org/10.1016/j.microrel.2013.10.017

IF: 1.6

2013-01-01

Microelectronics Reliability

Abstract:Both transient temperature and thermal stress responses in high power multi-finger AlGaN/GaN high electron mobility transistors (HEMTs), caused by their self-heating effects, are characterized in the present study. Instead of using commercial software, self-developed algorithm based on hybrid time-domain finite element method (TD-FEM) is applied for thermo-mechanical co-simulation of such 3-D structure. The temperature-dependent properties of most constitutive parameters of all materials involved, in particular for electrical conductivities, thermal conductivities, thermal expansion coefficients, and Young's modulus, are described by several sets of nonlinear polynomial expressions. The algorithm accuracy is validated in detail, with good agreement achieved in comparison with the commercial software COMSOL. It is believed that this study will be useful for effectively evaluating the reliability and lifetime of AlGaN/GaN HEMTs and their monolithic microwave integrated circuits (MMIC) used in high power communication systems and radars. (C) 2013 Elsevier Ltd. All rights reserved.
High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Na Li,Junfa Mao,Wen-Sheng Zhao,Min Tang,Wen-Yan Yin

DOI: https://doi.org/10.1109/tcpmt.2018.2853405

2018-01-01

IEEE Transactions on Components Packaging and Manufacturing Technology

Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.
Parallel Simulation of Electromagnetic and Thermal Characteristic in RF Component

GuoDong Zhu,Jie Tong,DaWei Wang,Jing Jin,Jun Hu,Z. G. Zhao,G. R. Li,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2017.8277057

2017-01-01

Abstract:Electrical-thermal co-simulation based on finite element method and massively parallel scheme which can perform on a supercomputer is proposed. Accuracy of the in-house high-performance computing scheme is validated by comparing the simulated results with commercial software. Then, a high frequency microstrip filter in system in package is analyzed by the proposed scheme.
A 3-D Integrated Power Module of GaN HEMTs Based on Silver Sintering Processes

Zezheng Dong,Haidong Yan,Yinxiang Fan,Xinke Wu,Junming Zhang

DOI: https://doi.org/10.1109/tpel.2023.3339759

IF: 5.967

2024-01-01

IEEE Transactions on Power Electronics

Abstract:A three-dimensional (3D) integrated packaging method is proposed in this letter. Re-distributed layers (RDLs) are realized by integrating flexible printed circuit (FPC) boards onto gallium nitride (GaN) high electron mobility transistor (HEMT) dies to enlarge the electrodes area and the clearance between them. GaN HEMTs with RDLs are sandwiched between a multi-layer printed circuit board (PCB) and an active metal brazing (AMB) board. Additionally, components like decoupling capacitors, gate driver, digital isolator and isolated power supply are integrated into this package. Silver sintering processes are employed to maintain consistent processing temperature for multiple interconnections, addressing reliability concerns associated with conventional multi-temperature gradient soldering methods. Furthermore, sintered silver significantly improves both electrical and thermal performances. Power and thermal managements are decoupled by using a PCB and AMB substrate, resulting in low parasitic inductances, minimal thermal resistance and electric field shielding. The experiment-measured power loop inductance is as low as 0.54 nH, and the simulated thermal resistance from GaN die to AMB board bottom is only 0.05 ℃/W. A detailed description of manufacturing processes, thermal performance test, dynamic switching performance with circuit-level simulated verification are provided in this letter.
Study of Thermal Simulation Technology for GaN Power Devices

Huaixin GUO,Ping HAN,Tangsheng CHEN

DOI: https://doi.org/10.19623/j.cnki.rpsse.2017.03.007

2017-01-01

Abstract:In view of the bottleneck of heat dissipation in high power devices,the research on thermal analysis technology for near-junction region of GaN power chip was carried out by the finite element method.The theoretical thermal model for calculating heat dissipation capacity of near-junction region was established,the effects of theoretical modeling factors including boundary condition,initial condition,lattice thermal impact,and structural hypothesis on simulation precision were studied systemically,and the causes of the above effects were analyzed.Meanwhile,infrared thermography technique was used to determine the junction temperature of GaN chip with different power density.It is found that the deviations between calculated values and experimental data of junction temperature are all less than 10％,indicating that thermal simulation technology based on proper modeling is applicable to quantitatively evaluate the heat dissipation capacity of power devices.
Non-linear thermal resistance model for the simulation of high power GaN-based devices

S Garca-Snchez,I iguez-de-la-Torre,S Prez,K Ranjan,M Agrawal,R Lingaparthi,D Nethaji,K Radhakrishnan,S Arulkumaran,G I Ng,T Gonzlez,J Mateos,S García-Sánchez,I Íñiguez-de-la-Torre,S Pérez,T González

DOI: https://doi.org/10.1088/1361-6641/abeb83

IF: 2.048

2021-03-29

Semiconductor Science and Technology

Abstract:Abstract We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature dependent thermal resistance models. Moreover, in order to correctly account for the steep increase of the thermal resistance of GaN devices at high temperature, where commonly used models fail, we propose a non-linear model which, included in an electro-thermal Monte Carlo simulator, is able to reproduce the strongly non-linear behavior of the thermal resistance observed in experiments at high DC power levels. The accuracy of the proposed non-linear thermal resistance model has been confirmed by means of the comparison with pulsed and DC measurements made in devices specifically fabricated on doped GaN, able to reach DC power levels above 150 W mm −1 at biases below 30 V.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
GaN device and modeling with emphasis on trapping effect and thermal challenges for PA design (Invited)

fujiang lin,weiqiang qian,lei li,mehdi khan

DOI: https://doi.org/10.1109/IMWS-AMP.2015.7324951

2015-01-01

Abstract:This paper presents the recent development of GaN device technologies and modeling cum methodologies for design high efficient GaN power amplifier. Focus is on the trapping and thermal effects which are difficult in GaN large-signal modeling. The mechanism of trapping and thermal is analyzed and simulated. GaN power amplifier design using developed model is introduced.
A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Huimin Wang,Zongyao Zhou,Zhiliang Xu,Xinglai Ge,Yongheng Yang,Yi Zhang,Bo Yao,Dong Xie

DOI: https://doi.org/10.1109/tpel.2024.3355207

IF: 5.967

2024-01-01

IEEE Transactions on Power Electronics

Abstract:A proper thermal network model (TNM) facilitates the thermal analysis of multichip power modules, and is beneficial to reliability evaluation of power converters. However, many TNMs are struggling to provide accurate thermal analysis while maintaining acceptable computational efficiency. To address this, a TNM based on the Cauer model is proposed in this paper, where the Cauer model is obtained with the assistance of the structure function (SF). Then, the thermal coupling effects in multichip power modules are fully characterized. More specifically, the thermal coupling in the proposed TNM is equivalent to the injected power losses from the specific nodes, and an enumeration method is accordingly used to identify the injected nodes and the injected power losses. Moreover, a discretization approach based on the forward Euler method is implemented to enhance the computational efficiency. Subsequently, the junction temperature of the multichip power module is estimated through the signal-flow graph method. Finally, the proposed TNM uses the typical insulated-gate bipolar transistor (IGBT) modules as a case study, and extensive simulations and experimental tests are conducted to validate the effectiveness of the proposed TNM.
Thermal and Electrical Characterization of TSV Interposer Embedded with Microchannel for 2.5D Integration of GaN RF Devices

Han Cai,Shenglin Ma,Wei Wang,Yufeng Jin,Jing Chen,Jian Zhang,Weiwei Xiang,Liulin Hu,Shuwei He

DOI: https://doi.org/10.1109/ectc.2018.00323

2018-05-01

Abstract:In this paper, a TSV interposer embedded with microchannel is proposed for 2.5D integration of GaN RF power device. S-shaped microchannel with symmetrical radial diversion structure in inlet/outlet region is designed to make a balance among process, cooling property and flow resistance. In order to avoid issues regarding to fabrication of TSV interconnections on thick bonded Si wafer embedded with microchannels, TSV is designed as having three different diameters along its axis which are 100µm, 180µm and 220µm in sequence from the bottom end to the top end and total height of 500µm. A process is developed with Si-Si wafer bonding process for the proposed TSV interposer embedded with S-shaped microchannel that is 50µm/100µm in its width/pitch, 300µm in the depth. Sample of TSV interposer embedded with microchannel is fabricated and tested electrically, it has a tested resistance about 6m Ω for TSV interconnection. In order to validate the proposed TSV interposer, A GaN RF power amplifier chip which has an equivalent thermal flux about 400W/cm2 is utilized as test vehicle and 2.5D integrated GaN RF power amplifier based TSV interposer with embedded cooling microfluidics is designed, assembled and tested. The experimental result show that 2.5D integrated GaN Power amplifier can work correctly.
Full 3D Thermal Simulation of GaN HEMT using Ultra-Fast Self-Adaptive Computations Driven by Experimentally Determined Thermal Maps

A. Helou,M. Tadjer,P. Raad,K. Hobart

DOI: https://doi.org/10.1109/THERMINIC.2018.8593301

2018-09-01

Abstract:A 3D model is built to fully characterize the thermal performance of a GaN HEMT device. Surface temperature maps obtained experimentally are used for the validation of the thermal model. A search method optimizes the input parameter set that results in minimum error between the numerical and the experimental temperature distribution at the surface of the device. The model results are matched to experimental thermoreflectance imaging results obtained at different activation power levels. This experimentally validated thermal model thus provides a full 3D temperature distribution for the activated HEMT device and the optimized input parameter file can provide the actual thermal characteristics of the device under test.

Engineering,Materials Science,Physics
A Temperature Analysis of High-power AlGaN/GaN HEMTs

J. Das,H. Oprins,H. Ji,A. Sarua,W. Ruythooren,J. Derluyn,M. Kuball,M. Germain,G. Borghs

DOI: https://doi.org/10.48550/arXiv.0709.1868

2007-09-12

Abstract:Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.

Materials Science
Thermal Resistance Analysis for a High Power 3D Integrated RF Module Based on TSV Interposer

Xinxin Ma,Shenglin Ma,Dan Gong,Mengcheng Wang,Yufeng Jin,Wei Wang,Jing Chen,Shuwei He,Liulin Hu,Bin Zhou

DOI: https://doi.org/10.1109/eptc47984.2019.9026586

2019-01-01

Abstract:This paper proposed a three-dimensional integrated RF transceiver module based on high resistivity Si interposer embedded with microchannel for on-site heat dissipation. It's composed of three stacked layers of TSV interposer, including the bottom one embedded with microchannels for on-site cooling which has four high power chips assembled on its top side, the middle one having four large cavities to accommodate the chips assembled on the bottom one which is utilized as a supporting layer, the top one having a IC driver chip mounted on its top side. In order to study its thermal property, a simplified thermal resistance network is built and analysis is done. To validate this method, finite element simulation is conducted and the results show that maximum deviation of the temperature rise of each high power chip mounted on the bottom Si interposer referring to coolant is 9.04% and minimum deviation is 4.85% in the range from 0.1m/s to 1m/s for DI coolant.
A GaN HEMT Integrated Power Module with Silver Sintering Processes

Zezheng Dong,Yinxiang Fan,Haidong Yan,Xinke Wu

DOI: https://doi.org/10.1109/peas58692.2023.10395709

2023-01-01

Abstract:Gallium nitride (GaN) high electron mobility transistors (HEMTs) are highly favored for high-power-density energy conversion systems. However, the packaging technology plays a critical role in determining device performance and reliability. The presence of parasitic inductances in the power loop, gate loop, and coupling between them can lead to voltage overshoot, ringing, crosstalk, and additional switching losses. Additionally, thermal management of GaN power devices is crucial due to their smaller die size. In this work, we propose an integrated power module for GaN HEMTs. The module utilizes a multilayer PCB to minimize parasitic inductances and a ceramic substrate for excellent thermal dissipation. We adopt silver sintering processes to enhance the module's thermal performance and reliability. Our proposed module demonstrates that power loop and gate loop inductances are 1.7 nH and around 2 nH, respectively. Moreover, the simulated junction to case thermal resistance is impressively low, measuring only 0.05 °C/m.W. These results highlight the potential of our approach in addressing the challenges of parasitic inductances and thermal management in GaN HEMT power modules.
Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Qiu Min,Shi Yun Zhou,Cheng Zhuo,Jian Ming Jin,Er Ping Li

DOI: https://doi.org/10.1109/isemc.2018.8394076

2018-01-01

Abstract:An electrical-thermal co-simulation method for through silicon via (TSV) and active tier in 3-D IC is presented in this paper. Based on the thermal-electrical analogy, both steady and transient co-simulation can be performed in frequently-used circuit solver. Accuracy and efficiency of the proposed method are demonstrated by numerical examples, which also show that active tiers have a greater effect on the whole thermal performance.
Three dimemsional electro-thermal coupled Monte Carlo device simulation

xiaoyan liu,kangliang wei,longxiang yin,gang du,hai jiang,kai zhao,lang zeng,xing zhang

DOI: https://doi.org/10.1109/ICSICT.2014.7021520

2014-01-01

Abstract:3D paralleled electro-thermal coupled full band ensemble MC simulation platform is developed for analysis of local heating effect on performance and reliability of semiconductor devices. This new developed simulation platform provides a powerful tool for thermal-aware device and circuit design of nano scale devices.
The Embedded Cooling Silicon 3D Stacking Thermal Test Vehicle

Xiaoliang Zhao,Penghuai Shu,Wei Li,Zhenyu Wang,Xiaobin Zhang

DOI: https://doi.org/10.1109/itherm55368.2023.10177502

2023-01-01

Abstract:The 3D SiP could effectively miniaturize the multiband RF TR array packages. However, the enormous heat generated by the high-power GaN devices hinders the ultra-compact 3D RF SiP reliability. Although the embedded manifold structure feasibility reduces the inner coolant pathways' construction complexity, the various microstructures on silicon would introduce reliability problems to the module whether during process or utilization. In this study, we proposed an embedded cooling silicon 3D (five layers) stacking TTV to mimic the heat dissipation capacity of the dual-band staking 3D embedded cooling RF SiP microsystem. The residue stress of the bonding process was optimized to guarantee the module's accomplishment. Both the thermography experiment results verify the proposed module has exceptional performance on heat dissipation (heat transfer coefficient: 25 kW/m 2. °C) and temperature uniformity (maximum temperature difference: 4.8 °C) utilizing bilayer diversified TTCs (thermal test chip). The experimental results were consistent with the numerical simulation within a tiny error range (± 5 %). Such embedded cooling silicon 3D stacking TTV design and fabrication process provided a constructive canonical form for the future compact multiband high-power RF microsystem.
ATSim3D: Towards Accurate Thermal Simulator for Heterogeneous 3D-IC Systems Considering Nonlinear Leakage and Conductivity

Qipan Wang,Tianxiang Zhu,Yibo Lin,Runsheng Wang,Ru Huang

DOI: https://doi.org/10.1109/ISEDA62518.2024.10617604

2024-01-01

Abstract:Thermal simulation plays a fundamental role in the thermal design of integrated circuits, especially 3D-ICs. Current simulators require significant runtime for high-resolution simulation, and dismiss the complex nonlinear thermal effects, such as nonlinear thermal conductivity and leakage power. To address these issues, we propose ATSim3D, a thermal simulator for simulating the steady-state temperature profile of nonlinear and heterogeneous 3D-IC systems. We utilize the global-local approach, combining a compact thermal model at the global level, and a finite volume method at the local level. We tackle the nonlinear effects with Kirchhoff transformation and iteration. ATSim3D enables local-level parallelization that helps achieve an average speedup of 40x compared to COMSOL, with a relative error < 3% and a state-of-the-art resolution of 4096×4096, holding promise for enhancing thermal-aware design in 3D-ICs.
Electro-Thermal Co-Optimization Design of GaN MMIC PA

Xinhuang Chen,Bin Li,Fengyuan Mao,Zhaohui Wu

DOI: https://doi.org/10.3390/electronics13234796

IF: 2.9

2024-12-06

Electronics

Abstract:A method of electro-thermal co-optimization design for the Gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) is introduced in this paper. Due to the self-heating effect of the GaN high electron mobility transistor (HEMT), it is necessary to pay attention to the influence of thermal resistance change on circuit performance when designing a high-power RF PA. For this purpose, a three-dimensional finite element analysis model of GaN multi-gate HEMT is developed. The thermal resistance and junction temperature of the device under a RF dynamic current are extracted by heat transfer simulation and can be substituted into the temperature node of the transistor model for PA circuit simulation design. To verify the proposed method, a Class AB MMIC PA was designed and tested using a 0.15-μm GaN-on-SiC process. Through the application of the above methods, the designed PA performance is optimized and achieves the performance of over 60% power-added efficiency (PAE) and 38 dBm saturation power (Psat) within a compact area of 1.6 mm × 2.2 mm. It is demonstrated that the proposed method can effectively improve the consistency of simulation results and measurement results, which can be a valuable reference for high-power MMIC PA design.

engineering, electrical & electronic,computer science, information systems,physics, applied
Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Ying Wang,Liu-An Li,Chong Li,Jin-Ping Ao,Xiao Wang,Yue Hao

DOI: https://doi.org/10.1109/jeds.2020.2967473

2020-01-01

IEEE Journal of the Electron Devices Society

Abstract:GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration. However, high lateral current in the 2DEG channel may lead to failures such as early breakdown and suppression of oscillations. In this paper, we will, for the first time, systematically investigate the thermal effect on DC IV and output RF characteristics of AlGaN/GaN hetero-structural planar Gunn diodes on different substrates including diamond, SiC, Si and sapphire. Our simulation results show that the best RF output performance comes with the devices on diamond substrate and no oscillating current is observed for devices on sapphire substrate. The suppress of Gunn oscillation in the device on sapphire is mainly due to the excessive heat generated in the channel that leads to increase of the dead zone and attenuation of electronic domains. These results will lay theoretical and experimental foundation for realizing not only milliwatt GaN-based terahertz semiconductor oscillators but also other power devices.

Thermal Simulations of 3-D Integrated Multi-Chip Module with GaN Power Amplifier and Si Modulator

Thermal modeling, analysis, and management of high-power GaN transistors

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Parallel Simulation of Electromagnetic and Thermal Characteristic in RF Component

A 3-D Integrated Power Module of GaN HEMTs Based on Silver Sintering Processes

Study of Thermal Simulation Technology for GaN Power Devices

Non-linear thermal resistance model for the simulation of high power GaN-based devices

GaN device and modeling with emphasis on trapping effect and thermal challenges for PA design (Invited)

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Thermal and Electrical Characterization of TSV Interposer Embedded with Microchannel for 2.5D Integration of GaN RF Devices

Full 3D Thermal Simulation of GaN HEMT using Ultra-Fast Self-Adaptive Computations Driven by Experimentally Determined Thermal Maps

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Thermal Resistance Analysis for a High Power 3D Integrated RF Module Based on TSV Interposer

A GaN HEMT Integrated Power Module with Silver Sintering Processes

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Three dimemsional electro-thermal coupled Monte Carlo device simulation

The Embedded Cooling Silicon 3D Stacking Thermal Test Vehicle

ATSim3D: Towards Accurate Thermal Simulator for Heterogeneous 3D-IC Systems Considering Nonlinear Leakage and Conductivity

Electro-Thermal Co-Optimization Design of GaN MMIC PA

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation