Three dimemsional electro-thermal coupled Monte Carlo device simulation

xiaoyan liu,kangliang wei,longxiang yin,gang du,hai jiang,kai zhao,lang zeng,xing zhang
DOI: https://doi.org/10.1109/ICSICT.2014.7021520
2014-01-01
Abstract:3D paralleled electro-thermal coupled full band ensemble MC simulation platform is developed for analysis of local heating effect on performance and reliability of semiconductor devices. This new developed simulation platform provides a powerful tool for thermal-aware device and circuit design of nano scale devices.
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