Abstract:With the rapid development of wireless communications, GaN HEMTs, which have various advantages of high power density, high electron mobility, and high breakdown threshold, have attracted increasing attention. Microwave power amplifiers based on GaN HEMTs are widely used in many fields, such as communication, medical, and detection instruments. In the accurate design of GaN microwave power amplifiers, reliable RF large signal models are vitally important. In this paper, a scalable large-signal model based on EEHEMT model is proposed to describe the properties of multifinger AlGaN/GaN high electrom mobility transistors (HEMTs) accurately. A series of scaling rules are established for the intrinsic parameters of the device, including drain-source current I ds , input capacitance C gs and C gd , which take into account both the gate width of a single finger and the number of gate fingers. With the proposed scalable large-signal model, the performances of the L-band GaN high-efficiency power amplifier with the length of gate of 14.4mm is analyzed. This amplifier demonstrates outstanding performance with the output power up to 46.5dBm and the drain efficiency of over 70% covering the entire frequency range from 1120MHz to 1340MHz. Great agreement between the simulations and experiments is achieved, demonstrating the excellent accuracy of the proposed model. Moreover, the proposed model can further predict the performance of high-order harmonics, providing an effective tool for the design of advanced high-power and high-efficiency microwave power amplifiers. Certainly, the EEHEMT model lacks the ability to characterize the dynamical behavior induced by trap and self-heating effects. Thus, for further consideration, scaling models for the thermal resistance and heat capacity will be investigated to broaden the applicability of the proposed model in the case of continuous waves.

Large-signal modeling of GaN devices with emphasis on trapping effect and thermal challenges (Invited)

GaN device and modeling with emphasis on trapping effect and thermal challenges for PA design (Invited)

Analysis of trapping effect in GaN HEMT modeling

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

Thermal Effect Simulation of GaN HFETs under CW and Pulsed Operation.

Thermal modeling, analysis, and management of high-power GaN transistors

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs Phemts

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

An 1-4;nhanced AlGaN/GaN HEMTs Large-Signal Model with Parameter Fxtraction Methodology

A large signal scaling model of high power GaN microwave device

Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

A Scalable Multiharmonic Surface-Potential Model of AlGaN/GaN HEMTs

An improved small‐signal model for GaN HEMTs devices

Space Mapping Technique Using Decomposed Mappings for GaN HEMT Modeling

A Normalized Quantitative Method for GaN HEMT Turn-ON Overvoltage Modeling and Suppressing

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect

Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices

A New Small-Signal Modeling and Extraction Method in AlGaN/GaN HEMTs

Accurate Large-Signal FET Model Tailored for Switching-Mode Power Amplifier Design.