Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

Modified Airy Function Method for Modeling of Direct Tunneling Current in Metal–oxide–semiconductor Structures

Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Direct tunneling current model for circuit simulation

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Characterization and modeling of the tunneling current in Si–SiO2–Si structures with ultra-thin oxide layer

Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Characterization of tunneling current in ultra-thin gate oxide

A Full-region Model for Ultra-Scaled MoS<inf>2</inf> MOSFET Covering Direct Source-Drain Tunneling

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures