An analytical threshold voltage model of halo-implanted MOSFETs

Tao Wu,Songtao Chen,Xiaoyan Liu,Gang Du,Ruqi Han

2004-01-01

Abstract:An analytical threshold voltage model of sub-100nm halo-implanted MOSFETs is developed. The model is based on quasi-2-D solution the Poisson's equation. A linear approximate is used near drain side to simplify the surface potential model. The model is able to be applied in the circuit simulation.

What problem does this paper attempt to address?

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Li Zunchao,Jiang Yaolin,Zhang Lili

DOI: https://doi.org/10.3321/j.issn:0253-987x.2006.10.012

2006-01-01

Abstract:A hetero-gate SOI MOSFET structure with asymmetric halo doping is proposed to improve the short channel effect and driving current.The impurity with higher concentration is injected into the channel end near the source and two materials with different work function are put together to form the gate.The analytical models of surface potential and threshold voltage for the fully depleted device are constructed by solving the 2D potential Poisson's equation.It is shown that the proposed structure can effectively suppress drain induced barrier lowering and hot carrier effect,and the threshold voltage clearly exhibits the considerable reverse short channel effect when the channel length is less than 100 nm.The two electric field peaks near the interface of halo and gate materials will greatly increase the transfer speed of carriers passing through the channel.The derived analytical models accord with the result from two-dimension device simulator MEDICI very well.
Performance and Analytical Modelling of Halo-Doped Surrounding Gate Mosfets

Li Zun-Chao

DOI: https://doi.org/10.1088/1674-1056/17/11/058

2008-01-01

Chinese Physics B

Abstract:Halo structure is added to sub-100 nm surrounding-gate metal–oxide–semiconductor field-effect-transistors (MOSFETs) to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson's equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.
An analytical threshold voltage model of strained surrounding-gate MOSFETs

Yao Liu,Zunchao Li

DOI: https://doi.org/10.1109/ICSICT.2012.6467930

2012-01-01

Abstract:Based on the comprehensive energy band structure of the strained-silicon and solving the 2D Poisson equation of the potential distribution in the channel, an analytical threshold voltage model of the strained surrounding-gate nMOSFET is developed. The dependence of the threshold voltage on the gate length, channel doping concentration and Ge content of the relaxed SiGe is studied using the model. The derived model shows good agreement with the numerical simulation.
Analytic threshold-voltage model for fully-depleted SOI MOSFET

Jun Fu,Liling Tian,Peixin Tian,Taichin Lou

1996-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:An analytic threshold-voltage model was established based on the approximate solution of the 2D Poisson's equation of the fully-depleted SOI MOSFET. The accuracy of the model is verified by comparison with the simulation results of PISCES and the corresponding experimental data. The model has such advantages as simple and quick calculation, analytic expression and explicit physical meaning. The establishment of the model is helpful to circuit simulation, study of device physical characteristics and the corresponding process design for the fully-depleted SOI MOSFET.
Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate Mosfets

Zunchao Li,Ruizhi Zhang,Feng Liang,Zhiyong Yang

DOI: https://doi.org/10.1587/transele.e92.c.558

2009-01-01

IEICE Transactions on Electronics

Abstract:Halo doping profile is used in nanoscale surrounding-gate MOSFETs to suppress short channel effect and improve current driving capability. Analytical surface potential and threshold voltage models are derived based on the analytical solution of Poisson's equation for the fully depleted symmetric and asymmetric halo-doped MOSFETs. The validity of the analytical models is verified using 3D numerical simulation. The performance of the halo-doped MOSFETs are studied and compared with the uniformly doped surrounding-gate MOSFETs. It is shown that the halo-doped channel can suppress threshold voltage roll-off and drain-induced barrier lowering, and improve carrier transport efficiency. The asymmetric halo structure is better in suppressing hot carrier effect than the symmetric halo structure.
Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

XY Liu,JF Kang,L Sun,RQ Han,YY Wang

DOI: https://doi.org/10.1109/55.998873

IF: 4.8157

2002-01-01

IEEE Electron Device Letters

Abstract:An analytic threshold voltage model, which can account for the short channel effect and the fringing field effect of sub-100 nm high-k gate dielectric MOSFETs, has been developed. The model considers the two-dimensional (2D) effect both in silicon bulk and in gate dielectric layer. The results of the model are consistent with 2D numerical simulation results.
Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile

Guohe Zhang,Zhibiao Shao,Kai Zhou

DOI: https://doi.org/10.1109/TED.2007.914832

2008-01-01

Abstract:A novel approximation of 2-D potential function perpendicular to the channel for fully depleted (FD) silicon-on-insulator (SOI) MOSFETs on films with vertical Gaussian profile is proposed in the paper, then an analytical threshold voltage model is derived. The model agrees well with the MEDICI numerical simulation results. It represents a feasible way to find the threshold voltage and gives some reference points in developing new 2-D models for nonuniform FD-SOI devices.
Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Zhang Dawei,Tian Lilin,Yu Zhiping

DOI: https://doi.org/10.1109/icecds.2017.8389713

2005-01-01

Chinese Journal of Semiconductors

Abstract:The field effect transistor fabricated in integrated circuits are majorly with junctions. Due to scaling of devices, these junctions have becoming increasingly difficult to fabricate. And also high doping concentration gradient is the stringent requirement for smooth functioning of the device. The newer devices have been proposed and demonstrated in which there are no junctions and no gradients of doping. One such device is the Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG-MOSFET) without junction which shows remarkable performance against short channel effects such as threshold voltage roll-off, Drain Induced Barrier Lowering (DIBL), etc. In this paper, a two dimensional model of threshold voltage is considered to study the performance of DG-MOSFET. The model used shows how the DG-MOSFET parameters such as the gate channel length, gate oxide thickness, drain to source voltage, and channel thickness, affect the threshold voltage degradation.
Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Xu Bojuan,Du Gang,Xia Zhiliang,Zeng Lang,Han Ruqi,Liu Xiaoyan

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.08.003

2007-01-01

Chinese Journal of Semiconductors

Abstract:A quasi two-dimensional (2D) analytical model of a double-gate (DG) MOSFET with Schottky source/drain is developed based on the Poisson equation.The 2D potential distribution in the channel is calculated.An expression for threshold voltage for a short-channel DG MOSFET with Schottky S/D is also presented by defining the turn-on condition.The results of the model are verified by the numerical simulator DESSIS-ISE.
Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Zun-Chao Li,Rui-Zhi Zhang,Yao-Lin Jiang

DOI: https://doi.org/10.1143/jjap.48.034505

IF: 1.5

2009-01-01

Japanese Journal of Applied Physics

Abstract:We present a modified surrounding-gate metal–oxide–semiconductor field effect transistor (MOSFET), in which the gate consists of two metals with different work functions, and single-halo doping is added to the channel near the source end. The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, electric field, and threshold voltage. It is shown that the novel MOSFET could significantly reduce threshold voltage roll-off and drain-induced barrier lowering, and simultaneously improve carrier transport efficiency by carefully configuring the halo doping and work functions of the dual-material gate. The results predicted using the models are compared with those obtained with the three-dimensional simulator Davinci to verify the accuracy of the proposed analytical models.
Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Zhang Zhengfan,Fang Jian,Li Ruzhang,Zhang Zhengyuan,Li Zhaoji

DOI: https://doi.org/10.1109/icasic.2007.4415838

2007-01-01

Abstract:In this paper, the threshold voltage model using a quasi -2D approximation for deep submicron double-gate fully-depleted SOI PMOS devices was described by solving basic semiconductor physical equations. Taking into consideration the distribution of minority carriers in the silicon film, the analytical threshold voltage model to make an accurate prediction of short-channel effect has been obtained, and also a further threshold voltage model including DIBL effect and interface charge effect was obtained. The analytical voltage model applies also to SOI NMOS devices. All of the above models have been verified by the results of 2D device simulator MEDICI.
Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

Dawei Zhang,Hao Zhang,Guangping Zhu,Xuelian Zhang,Lilin Tian,Zhiping Yu

DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.03.025

2005-01-01

Abstract:Analytical models for the correction to the threshold voltage, due to the two dimensional (2D) quantum mechanical (QM) effects in the transport direction and the QM effects in the poly-silicon gate (poly-gate) region, are established respectively based on the theory of locality and the analytical solution to the 2D Poisson equation and on the density gradient model. These corrections are then combined with the ballistic transport theory to establish a compact I-V model for sub-100 nm MOSFETs. This compact model renders satisfactory results (standard relative error less than 8%) compared to the experimental data of a 45 nm-channel manufactured device provided by TSMC and the numerical results of three sets of sub-100 nm MOSFETs, which prove its accuracy and scalability.
A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Ru Huang,Xing Zhang,RuQi Han,YangYuan Wang

DOI: https://doi.org/10.1016/S0038-1101(03)00029-7

IF: 1.916

2003-01-01

Solid-State Electronics

Abstract:An improved physically-based model for deep-submicrometer SOI dynamic threshold-voltage MOSFET (DTMOS) is proposed in this paper, considering the mobile charge determined by both the forward base bias and the gate controlling for quasi-two-dimensional analysis. The alleviated dependence of the surface potential on the channel length and the drain voltage is described, as well as the unique dynamic characteristics of the threshold voltage and threshold-voltage shift for DTMOS. Key physical effects, including velocity saturation effect, mobility degradation effect and channel length modulation effect influenced by the dynamic threshold voltage, are involved in this model. The model is verified by the comparison between the model predictions, numerical results and experimental data of SOI DTMOS devices with various geometries.
Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Sufen Wei,Guohe Zhang,Zhibiao Shao,Huixiang Huang,Li Geng

DOI: https://doi.org/10.7567/JJAP.55.104201

IF: 1.5

2016-01-01

Japanese Journal of Applied Physics

Abstract:We verify that one-dimensional (1D) Gaussian expression is an appropriate approximation of the vertical doping profile, which is obtained by combining perpendicular ion implantation and rapid thermal annealing (RTA), for short-channel thin-body (20-30 nm) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs. The two-dimensional (2D) potential distribution of the silicon film is derived by adopting the evanescent mode analysis method, in which the potential function is broken into 1D long-channel and 2D short-channel potentials. The threshold voltage model is represented by the minimum front-and back-surface potentials of the silicon film. The application of the threshold voltage model can be extended to a 12 nm channel length. The results obtained using the models match well with the 2D numerical simulation results obtained using the Synopsys Sentaurus Device (TM). They provide a feasible way of developing new 2D models for nonuniform nanoscale thin-body FD-SOI devices. (C) 2016 The Japan Society of Applied Physics
Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Bin Lu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Xiaoran Cui,Chengji Jin,Chen Liu

DOI: https://doi.org/10.1016/j.microrel.2017.05.013

IF: 1.6

2017-01-01

Microelectronics Reliability

Abstract:In this paper, an improved analytical model of the channel surface potential in the tunnel field effect transistors is established with modified boundary conditions considering the source and drain depletion widths, avoiding the deviation of the channel potential and the overestimate on the electric field. Based on the proposed surface potential model, the threshold voltage model is also developed with the transconductance change method. The influences of the channel and oxide structures on surface potential and threshold voltage are investigated. The good agreement is obtained by the comparison of the modeling results with the numerical simulation results, verifying the validation of the proposed model, and it also implied that this model will be helpful for the further investigation of TFETs.
An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Huixiang Huang,Sufen Wei,Jinyan Pan,Wenbin Xu,Qiang Mei,Jinhai Chen,Li Geng,Zhengxuan Zhang,Chi-Cheng Chen

DOI: https://doi.org/10.1007/s00542-018-4227-1

2018-01-01

Microsystem Technologies

Abstract:The objective of this study is to present an analytical subthreshold swing model for fully-depleted metal-oxide semiconductor field-effect transistors (MOSFETs) with vertical Gaussian profile fabricated on modified Silicon-on-Insulator (SOI) wafers. Commercial SOI wafers are radiation hardened by Si+ implantation which creates interface traps at buried SiO2/Si interface. Considering that channel potential is affected by non-uniform doping profile combined with process- and radiation-induced traps, the model is derived based on effective conduction path effect. The proposed model is validated by comparing analytical results with numerical simulation data obtained by using commercially available Sentaurus technology computer-aided design. The model agrees well with experimental extractions of irradiated nMOSFETs. This model is believed to be able to provide better physical insight and understanding of total dose irradiated modified SOI MOSFET devices operating in subthreshold regime.
Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Baili Zhang,Haijun Lou,Dan Li,Xinnan Lin,Mansun Chan

DOI: https://doi.org/10.1109/icsict.2014.7021389

2014-01-01

Abstract:In this paper, a new 2-D analytical potential model in the subthreshold regime for short-channel junctionless cylindrical surrounding-gate (JLCSG) MOSFETs is proposed as the source/drain depletion length taken into account. Then the analytical models for the threshold voltage (Vth), subthreshold slope (SS), and drain-induced barrier lowering (DIBL) are also derived from the potential relationship. The model is verified by the numerical simulation and results show good agreement with the simulations.
Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

guangxi hu,shuyan hu,peicheng li,ran liu,lingli wang,xing zhou

DOI: https://doi.org/10.1109/ICSICT.2014.7021427

2014-01-01

Abstract:The threshold voltage, Vth, of a surrounding-gate (SG) Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. An analytical expression for surface potential is obtained by solving Poisson's equation. Based on the potential model, an analytical expression for Vth is achieved, with quantum mechanical effects and SB lowering effect included. It is found that Vth will be raised by quantum mechanical effects and lowered by SB lowering effect. It is also found that, the influence of channel length on Vth is complicated; when the channel length is 20 nm, Vth is the smallest.
Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Hui Fang Xu,Guo Wei Cui,Yong Li,Wen Yang Sun,Kui Xia,Chao He,Kui Xia and Chao He

DOI: https://doi.org/10.35848/1347-4065/ad27a2

IF: 1.5

2024-03-05

Japanese Journal of Applied Physics

Abstract:A two-dimensional (2D) analytical model considering the effects of the gate oxide region, channel region, and buried oxide region for a non-lightly doped drain (LDD) SOI MOSFET is proposed. The top and bottom surface potential distributions have been derived on the basis of solving 2D Poisson's equation and using an evanescent mode analysis. The potential distribution, threshold voltage, and threshold voltage roll-off have been verified by Silvaco ATLAS simulated results for the proposed device with different device parameters. The model agrees well with the simulation results under the above-mentioned conditions. Therefore, the analytical model provides the basic designing guidance for non-LDD SOI MOSFETs.

physics, applied
Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

LI Zun-chao,Yaolin Jiang,Jianmin Wu

2007-01-01

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Abstract:A dual-material-gate single-halo SOI MOSFET was proposed to suppress the short channel effect and increase the current driving capacity of deep submicron SOI MOSFETs. The gate consists of two materials contacting laterally and with different work functions, and halo doping is used in the channel near the source. Using the multi-region parabola potential distribution and the universal boundary conditions, the two-dimensional analytical models of surface potential and threshold voltage for the novel device were derived by solving the two-dimensional Poisson's equation under the fully depleted condition. The characteristics of the novel device were studied as compared with the conventional SOI MOSFET. It was shown that the novel device could suppress threshold voltage roll-off, hot carrier and drain-induced barrier lowering effects efficiently, and increase carrier transport speed through the channel considerably. The analytical models are in very good agreement with two-dimensional device simulator MEDICI.

An analytical threshold voltage model of halo-implanted MOSFETs

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Performance and Analytical Modelling of Halo-Doped Surrounding Gate Mosfets

An analytical threshold voltage model of strained surrounding-gate MOSFETs

Analytic threshold-voltage model for fully-depleted SOI MOSFET

Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate Mosfets

Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics

Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET