Abstract:A partially-depleted dual-material surrounding-gate metal-oxide-semiconductor field-effect-transistor (MOSFET) structure (DMSG) is proposed to suppress the short channel effect and to increase the current drivability. Two-dimensional analytical models for both surface potential and threshold voltage are respectively presented for the novel structure. The dual-material surrounding gate consists of two metals connecting tightly with different work functions, and it can produce the electric field peak near the source in the channel, decrease the electric field near the drain, and mask the influence of the drain voltage on the minimum surface potential. The potential Poisson equations in the two depleted divisions are given with the boundary conditions in the cylindrical coordinate system. The analytical models are derived based on the solution of the partial differential equations through reducing the dimensions with parabolic potential approximation in the direction vertical to the channel. Numerical simulation and comparisons with the traditional partially depleted device show that the DMSG device increases the carrier transport efficiency, and suppresses the short channel effect, drain-induced barrier lowering effect and hot carrier effect, and that the relative error between the derived analytical model and the numerical simulation software is less than 5%.

Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Threshold Voltage Modeling of Partially-Depleted Dual-Material Surrounding Gate Field-Effect Transistor

Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

Analytic threshold-voltage model for fully-depleted SOI MOSFET

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Analytic channel potential solution to the undoped surrounding-gate MOSFETs

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

An analytical threshold voltage model of strained surrounding-gate MOSFETs

Quantum Mechanical Effects on the Threshold Voltage of Surrounding-Gate Mosfets

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Analysis of Threshold Voltage Decreasing for Double-Gate and Surrounding-Gate MOSFET's

A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs