Abstract:This paper presents a carrier-based continuous analytic I-V model for long channel undoped (lightly doped) Ultra-Thin-Body Silicon-on-insulator (UTB-SOI) MOSFETs. It is based on the solution of Poisson-Boltzmann equation, and the current continuity equation of Pao-Sah current formulation in terms of the mobile carrier concentration under an appropriate boundary approximation. The model is continuous and valid for all the operation regions (linear, saturation, sub-threshold) and traces the transition between them. This preliminary model has been verified by comparing with long channel results generated by two-dimensional simulator. The predicted I-V characteristics also show in a good agreement with two-dimensional numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET modelling if the appropriate second-order effects such as quantum mechanical effect, doping profile effect, short-channel effects, and poly-depletion effect are integrated into it.

Analytic threshold-voltage model for fully-depleted SOI MOSFET

Analytic subthreshold slope model for deep-submicrometer fully depleted SOI MOSFET's

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

An analytical threshold voltage model of halo-implanted MOSFETs

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

Analytic Investigation on the Threshold Voltage of Fully-Depleted Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

An SOI MOSFET Model for Analog Circuit Design

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Fully depleted short-channel SOI LDD/LDS MDSFET model for VLSI circuits analysis

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A Rigorous Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-On-Insulator (Utb-Soi) Mosfets

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A New Threshold Voltage Shift Model Due to Radiation in Fully-Depleted SOI MOSFET

New physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel

A carrier-based analytic model for undoped Ultra-Thin-Body Silicon-on-insulator (UTB-SOI)MOSFETS

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Threshold Voltage Model of a Double-Gate MOSFET with Schottky Source and Drain

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator ( UTB-SOI ) MOSFETs

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain