A continuous yet explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs

Zhang Lining,He Jin,Zhang Jian,Feng Jie

2008-01-01

Abstract:An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper. An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact solution of Poisson's equation of the surrounding-gate MOSFETs, instead of resorting to the Newton-Raphson numerical iterative. The analytic approximation not only gives accurate dependences of the carrier concentration on the geometry structures and bias, compared with the Newton-Raphson numerical method, but also is used to develop an explicit current-voltage model of the surrounding-gate MOSFETs combined with Pao-Pah current formulation. The presented explicit model is found to be computationally more efficient than the previous numerical Newton-Raphson iterative while more accurate than the previously published explicit model.