Abstract:β -Gallium oxide (Ga 2 O 3 ) is an extensively investigated ultrawide-bandgap semiconductor for potential applications in power electronics and radio frequency switching. The room temperature bulk electron mobility ( ∼200cm2V−1s−1 ) is comparatively low and is limited by the 30 phonon modes originating from its 10-atom primitive cell. The theoretically calculated saturation velocity in bulk is 1– 2×107cms−1 (comparable to GaN) and is limited by the low field mobility. This work explores the high field electron transport (and hence the velocity saturation) in the 2DEG based on the first principles calculated parameters. A self-consistent calculation on a given heterostructure design gives the confined eigenfunctions and eigenenergies. The intrasubband and the intersubband scattering rates are calculated based on the Fermi's golden rule considering longitudinal optical (LO) phonon–plasmon screening. The high field characteristics are extracted from the full-band Monte Carlo simulation of heterostructures at 300 K. The overall system is divided into a 2D and a 3D region mimicking the electrons in the 2DEG and the bulk, respectively. The electron transport is treated through an integrated Monte Carlo program which outputs the steady state zone population, transient dynamics, and the velocity–field curves for a few heterostructure designs. The critical field for saturation does not change significantly from bulk values, however, an improved peak velocity is calculated at a higher 2DEG density. The velocity at low 2DEG densities is impacted by the antiscreening of LO phonons which plays an important role in shaping the zone population. A comparison with the experimental measurements is also carried out and possible origins of the discrepancies with experiments is discussed.

Analytical model for 2DEG charge density in β-(Al x Ga1−x )2O3/Ga2O3 HFET

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Analytical Modeling of $I-V$ characteristics using 2D Poisson Equations in AlN/$β$-Ga$_2$O$_3$ HEMT

Analytical modeling of 2DEG with 2DHG polarization charge density drain current and small‐signal model of quaternary AlInGaN HEMTs for microwave frequency applications

Analytically Modeling the Effect of Buffer Charge on the 2DEG Density in AlGaN/GaN HEMT

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Physics-Based 2-D Analytical Model for Field-Plate Engineering of AlGaN/GaN Power HFET

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Al X in 1-X N/GaN Heterostructure Field Effect Transistors

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform

2-D Analytical Model for Current–Voltage Characteristics and Transconductance of AlGaN/GaN MODFETs

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation