Abstract:The carriers' mobility in 5d transition metal oxides‐based two‐dimensional electron systems is significantly hampered by the inevitable presence of defects. In order to overcome this challenge, ionic‐liquid gating at room temperature is applied to affect the oxygen vacancies and efficiently reduce any disorder at the interface. In this way, very high mobility of the amorphous LaAlO3/KTaO3 interface is demonstrated. Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin‐orbit coupling, 5d transition metal oxides‐based two‐dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high‐performance devices, in 5d‐oxides devices remains far behind their 3d‐oxides analogs. The carriers' mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, very high mobility (≈22 650 cm2 V−1 s−1) of 5d‐2DES confined at the LaAlO3/KTaO3 interface is reported. The high mobility, which is beyond the values observed in SrTiO3 2DESs in the same carrier‐density range, is achieved using the ionic‐liquid gating at room temperature. The authors postulate that the ionic‐liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back‐gate voltage, the authors reveal that the mobility follows the power‐law μ ∝ n1.2, indicating the very high quality of ionic‐liquid‐gated LaAlO3/KTaO3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high‐mobility electrons occupy the electronic sub‐bands emerging from the Ta:5d orbitals of KTaO3.

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

The density and disorder tuned superconductor-metal transition in two dimensions

Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Tuning the Electron Gas at an Oxide Heterointerface Via Free Surface Charges

Fully Optical Modulation of the Two-Dimensional Electron Gas at the Γ-Al2o3/srtio3 Interface.

Tunable one-dimensional electron gas carrier densities at nanostructured oxide interfaces

A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface

Fractionally delta-doped oxide superlattices for higher carrier mobilities

Effect of Surface Disorder on the Chiral Surface States of a Three-Dimensional Quantum Hall System

Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO$_{3}$

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Tuning the Kondo Effect Via Gating-Controlled Orbital Selection in the LaAlO3/SrTiO3 Interfacial D-Electron System

Carrier‐Modulated Anomalous Electron Transport in Electrolyte‐Gated SrTiO3

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Tunable magnetic interactions in LaAlO3/SrTiO3 heterostructures by ionic liquid gating

Giant Tunability of the Two-Dimensional Electron Gas at the Interface of Γ-Al2o3/srtio3

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Density inhomogeneities and Rashba spin-orbit coupling interplay in oxide interfaces

Ionic Modulation at the LaAlO3/KTaO3 Interface for Extreme High‐Mobility Two‐Dimensional Electron Gas