Abstract:Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current.

Carrier‐Modulated Anomalous Electron Transport in Electrolyte‐Gated SrTiO3

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Electrolyte gate-controlled Kondo effect in SrTiO3

Distinct differences in surface transport between electrolyte-gated (110) and (001) SrTiO3

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Transport abnormity and its modulations via gating effect and light illumination at the SrNbO3/SrTiO(3)interface

Coexistence of high electron-mobility, unpaired spins, and superconductivity at high carrier density SrTiO$_3$-based interfaces

Visible-light-enhanced gating effect at the LaAlO₃/SrTiO₃ interface.

Visible-light-enhanced gating effect at the LaAlO 3 /SrTiO 3 interface

Phase diagram of electrostatically doped Strontium Titanate (SrTiO3)

Anomalous Transport in Sketched Nanostructures at the LaAlO3/SrTiO3 Interface

The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics

Carrier-independent ferromagnetism and giant anomalous Hall effect in magnetic topological insulator

Quasi-two-dimensional Electron Gas and Weak Antilocalization at the Interface of SrTaO3/KTaO3 Heterostructures

Anisotropic transport at the LaAlO3/SrTiO3 interface explained by microscopic imaging of channel-flow over SrTiO3 domains

Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System

Current Mapping of Amorphous LaAlO3/SrTiO3 near the Metal-Insulator Transition

Tunable magnetic interactions in LaAlO3/SrTiO3 heterostructures by ionic liquid gating

Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

Gate-tunable multiband transport in ZrTe5 thin devices

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi) 2 Te 3