Tuning the Kondo Effect Via Gating-Controlled Orbital Selection in the LaAlO3/SrTiO3 Interfacial D-Electron System

Yuedong Yan,Linhai Guo,Lin Li,Laiming Wei,Weiqiang Chen,Changgan Zeng,Jianguo Hou
DOI: https://doi.org/10.1103/physrevb.101.035119
IF: 3.7
2020-01-01
Physical Review B
Abstract:The orbital degree of freedom plays a critical role in contemporary condensed-matter physics, with recent discoveries of orbital-dependent many-body effects including electron correlation and superconductivity. Nevertheless, these orbital-dependent many-body effects have mainly been observed in bulk materials, wherein the electrons' orbital attribute is challenging to tailor selectively. Here, by planar tunneling into the two-dimensional electron system (2DES) at the LaAlO3/SrTiO3 interface, we observed a Kondo resonance, a model many-body phenomenon. The observation of the Kondo resonance provides an ideal opportunity to quantitatively exploit the emerging interfacial Kondo physics. Furthermore, it was found that the Kondo coupling strength and resonance line shape can be effectively regulated by electrostatic gating and show a sharp transition at the Lifshitz point, where the orbital occupancy of the 2DES changes from only d(xy) to both d(xy) and d(xy/yz). This unusual behavior is attributed to the orbital selectivity effect in this unique multiple-d-band system, wherein the itinerant d(xy) and d(xy/yz) electrons have different orbital symmetries and therefore different Kondo exchange coupling with the localized d(xy) electrons. The present study may pave the way for manipulating many-body effects in 2D multiband materials via orbital engineering of itinerant electrons.
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