Abstract:All-solid-state electric double-layer (EDL) thin-film transistors (TFTs) consisting of solution-processed LaZrO gate insulators and sputtered InO channels with thicknesses of 10–200 nm were prepared, and their microstructures and electrical properties were investigated. In addition, mobility, carrier concentration, and their gate-voltage dependence in the InO layer were analyzed during a transistor operation to clarify the electron transport properties. It was confirmed that LaZrO was amorphous and that InO crystallized and had an In2O3 bixbyite structure. The transfer conductance increased with the InO thickness, and its normalized value was maximized (3.6 mS/V) at an InO thickness of 200 nm. The maximum capacitance of LaZrO was 31 μF/cm2, strongly suggesting the formation of an EDL. Solid EDL-TFTs operated stably without deterioration at gate voltages up to 5 V, which usually degrade liquid-electrolyte EDL transistors via electrolysis. Assuming the formation of a 1-nm-thick EDL, the concentration of carrier electrons induced during the transistor operation was estimated to be 1019–1021 cm−3. Moreover, the mobility increased with the InO thickness and reached a maximum value of 68 cm2/(V s) at an InO thickness of 120 nm. The conduction electrons were significantly affected by grain boundary scattering and surface scattering, in addition to scattering within the crystal grain. An increase in the InO thickness, which improved the crystallinity in the crystal grain, reduced the barrier height and the effect of grain boundary scattering.

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