Abstract:In this study, an inorganic–organic hybrid thin-film transistor (TFT) with a top-gate structure is prepared using an inorganic ZnSnO film prepared via pulse plasma deposition as the channel layer and an organic polymethyl methacrylate film prepared by the solution method as the dielectric layer. The effect of oxygen pressure during the preparation of the ZnSnO channel layer and channel-layer structure on ZnSnO TFT performance was studied. The results show that increasing the oxygen pressure during the preparation process can effectively inhibit the formation of oxygen vacancies in ZnSnO and reduce the concentration of electron carriers in ZnSnO, resulting in a reduced off current and a positive shift of the threshold voltage ( V th ) in the single-channel layer ZnSnO TFT. In addition, a high-resistivity ZnSnO layer (Lt; with a lower electron-carrier concentration) is embedded between the low-resistivity ZnSnO layer (Lb; with a higher electron-carrier concentration) and the dielectric layer to form a high-/low-resistivity double-channel-layer structure (Lt/Lb). By changing the thickness combination of Lt/Lb, the resistance of the channel layer and the number of carriers modulated by gate voltage in the channel layer can be optimized, thereby adjusting the device's on current (affecting device mobility) and key energy consumption parameters (i.e., V th and off current) to achieve independent control. Thus, the fabricated double-channel-layer ZnSnO TFT exhibits excellent performance: high mobility (3.28 cm 2 /Vs), positive V th close to 0 V (0.48 V), and on-to-off current ratio of > 10 5 .

Top-gate LZTO Thin-Film Transistors with PMMA Gate Insulator by Solution Process

Low-temperature preparation and characteristics of top-gate thin film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers

Dip-coated Al–In–Zn–O Thin-Film Transistor with Poly-Methylmethacrylate Gate Dielectric

High-Performamce Amorphous Ingazno Thin-Film Transistor with Zrlao Gate Dielectric Fabricated at Room Temperature

Amorphous LaZnSnO Thin Films by a Combustion Solution Process and Application in Thin Film Transistors

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

Significant Performance and Stability Improvement of Low-Voltage InZnO Thin-Film Transistors by Slight La Doping

Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors with High- ${k}$ ZrO 2 Gate Insulator

Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition

A Study on the Bottom-gate ITO-stabilized ZnO Thin-Film Transistors

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor