Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

Current Mechanism and Band Alignment of Al (pt)/hfgdo/ge Capacitors

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

C-V and J-V Investigation of HfO2/Al2O3 Bilayer Dielectrics MOSCAPs on (100) Β-Ga2o3

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Band alignment and interfacial properties of atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1− x gate dielectrics on Ge

Current conduction mechanisms of 0.65 nm equivalent oxide thickness HfZrLaO thin films

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Comparison Of The Interfacial And Electrical Properties Of Hfalo Films On Ge With S And Geo2 Passivation

Hfo2/Al2o3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Density

Growth and interfacial properties of atomic layer deposited Al 0.7 Ti 0.3 O y high- k dielectric on Ge substrate

Gasb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited Hfalo As Gate Dielectric

Impact of the Al/Hf Ratio on the Electrical Properties and Band Alignments of Atomic-Layer-Deposited Hfo2/Al2o3 on S-Passivated Gaas Substrates