Stoichiometry of Laalo3 Films Grown on Srtio3 by Pulsed Laser Deposition

M. Golalikhani,Q. Y. Lei,G. Chen,J. E. Spanier,H. Ghassemi,C. L. Johnson,M. L. Taheri,X. X. Xi

DOI: https://doi.org/10.1063/1.4811821

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:We have studied the stoichiometry of epitaxial LaAlO3 thin films on SrTiO3 substrate grown by pulsed laser deposition as a function of laser energy density and oxygen pressure during the film growth. Both x-ray diffraction (θ-2θ scan and reciprocal space mapping) and transmission electron microscopy (geometric phase analysis) revealed a change of lattice constant in the film with the distance from the substrate. Combined with composition analysis using x-ray fluorescence we found that the nominal unit-cell volume expanded when the LaAlO3 film was La-rich, but remained near the bulk value when the film was La-poor or stoichiometric. La excess was found in all the films deposited in oxygen pressures lower than 10−2 Torr. We conclude that the discussion of LaAlO3/SrTiO3 interfacial properties should include the effects of cation off-stoichiometry in the LaAlO3 films when the deposition is conducted under low oxygen pressures.