Quantum Size Effect Induced Dilute Atomic Layers in Ultrathin Al Films

Ying Jiang,Kehui Wu,Zhe Tang,Ph. Ebert,E. G. Wang

DOI: https://doi.org/10.1103/physrevb.76.035409

IF: 3.7

2007-01-01

Physical Review B

Abstract:We illustrate using scanning tunneling microscopy and low energy electron diffraction that thin Al films grown on Si(111)-root 3x root 3-Al substrates form layers having unusual thicknesses, not compatible with a normal fcc stacking of dense Al(111)-1x1 layers (coverage < wetting layer+7 angstrom). This structure is shown to be based on inserted dilute 1.5x1.5 atomic layers. At a film thickness of the wetting layer+7 angstrom, the film undergoes a phase transformation and continues to grow in the normal stacking of Al(111)-1x1 layers. The phenomenon is explained within the theory of the quantum size effects in a jellium metal combined with strain effects. We argue that the insertion of dilute atomic layers for small film thicknesses allows the Al film to reach thicknesses perfectly well adjusted to the minima of the oscillating electron energy, which arises from the spatial confinement of the free electrons in the thin film. In contrast, at larger thicknesses, where the electron energy differences diminish, a strain-driven phase transformation drives the system back to the classical close-packed Al(111)-1x1 fcc stacking.