Abstract:Good quality epitaxial β-SiC growth on Si(001) substrates is conventionally obtained by various chemical vapour deposition process using the reaction of carbon and silicon-containing gases at high temperature (around 1300°C). We explore here an alternative route, at lower sample temperature, where SiC growth is obtained by molecular beam epitaxy evaporation of Si with C2H4 cracking on a surface held at 850°C. Preliminary IR analyses show the expected absorption band at 794 cm−1 of β-SiC with a damping coefficient of 0.02 close to the theoretical value (0.01). Moreover, cross-sectional transmission electron microscopy and in-situ X-ray photoelectron spectroscopy studies revealed the presence of elemental Si on the SiC surface, related to out-diffusion of Si atoms from the substrate. This on-top diffusion generates large pyramid-shaped defects in the substrate along 〈011〉 directions and contributes to the formation of strong SiC islands emerging above other SiC regions presenting more regular two-dimensional growth. High resolution figures obtained by zooming on these islands allows us to probe their local polycrystalline atomic structure. These defects are not characteristic of our growth process as they were observed previously using other growth methods. Investigations are under way to determine a growth procedure which suppresses the formation of these defects.

Photoemission Study of Β-Sic Growth by a Polyimide Langmuir–Blodgett Film on Silicon

Growth of Β-Sic Film by Pyrolysis of Polyimide Langmuir–Blodgett Films on Silicon

Thin SiC Films Prepared by Pyrolysis of Polyimide Langmuir–Blodgett Films on Silicon

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

SiC Formation at the Interface of Polyimide Langmuir–Blodgett Film and Silicon

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method

X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth Sic on Si(100) Using C-60 and Si

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Effects of Carbonization and Substrate Temperature on the Growth of 3c–sic on Si(111) by SSMBE

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Observation of Si Out-Diffusion Related Defects in SiC Growth on Si(001)

Growth of 3C-Sic Films on On-axis 6H-Sic Substrates by LPCVD

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

The Growth of Si on Sic Complex Substrate by Cvd

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition