Abstract:Silicon carbide (SiC) has been widely added into light metals, e.g., Al, to enhance their mechanical performance and corrosion resistance. SiC particle-reinforced metal matrix composites (SiC-MMCs) exhibit low weight/volume ratios, high strength/hardness, high corrosion resistance, and thermal stability. They have potential applications in aerospace, automobiles, and other specialized equipment. The macro-mechanical properties of Al/SiC composites depend on the local structures and chemical interactions at the Al/SiC interfaces at the atomic level. Moreover, the added SiC particles may act as potential nucleation sites during solidification. We investigate local atomic ordering and chemical interactions at the interfaces between liquid Al (Al(l) in short) and polar SiC substrates using ab initio molecular dynamics (AIMD) methods. The simulations reveal a rich variety of interfacial interactions. Charge transfer occurs from Al(l) to C-terminating atoms (Δq = 0.3e/Al on average), while chemical bonding between interfacial Si and Al(l) atoms is more covalent with a minor charge transfer of Δq = 0.04e/Al. The prenucleation at both interfaces is moderate with three to four recognizable layers. The information obtained here helps increase understanding of the interfacial interactions at Al/SiC at the atomic level and the related macro-mechanical properties, which is helpful in designing novel SiC-MMC materials with desirable properties and optimizing related manufacturing and machining processes.

SiC Formation at the Interface of Polyimide Langmuir–Blodgett Film and Silicon

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Photoemission Study of Β-Sic Growth by a Polyimide Langmuir–Blodgett Film on Silicon

Growth of Β-Sic Film by Pyrolysis of Polyimide Langmuir–Blodgett Films on Silicon

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

Growth and Chemical Thermodynamics Analysis of SiC Film on Si Substrate by Heating Polystyrene/Silica Bilayer Method

Carbonization Process And Sic Formation At C-60/Si(111) Interface Studied By Srpes

Thin SiC Films Prepared by Pyrolysis of Polyimide Langmuir–Blodgett Films on Silicon

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Initial stage of Cu/3C-SiC(111) interface formation at room temperature

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Structural Investigation of SiC/Al4C3 and SiC/TiC Interfaces Formed in the Brazing of Sic

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd