Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system

Preparation of oriented Al-N nanometer thin films by microwave plasma-enhanced chemical vapor deposition

Rate-limiting process and growth kinetics of AlN thin films by microwave plasma CVD with AlBr3-NH3-N2 system

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

The growth mechanism of 〈1010〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Interfacial Properties of AlN/Si (111) Grown by Metal-Organic Chemical Vapour Deposition

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Surface Control of AlN Single Crystal Growth on SiC Substrate

Preparation and Properties of C-axis Preferred Orientation AlN Thin Films by Pure Nitrogen Reactive Sputtering

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer