Abstract:Chemical surface treatments were conducted on mechanically polished (MP) and chemomechanically polished (CMP) (0001)-oriented single crystalline aluminum nitride (AlN) substrates to determine a surface preparation procedure for the homoepitaxial deposition of AlN epitaxial layers by metalorganic chemical vapor deposition. MP AlN substrates characterized by atomic force microscopy exhibited 0.5 nm rms roughness and polishing scratches, while CMP AlN substrates exhibited 0.1 nm rms roughness and were scratch-free. X-ray photoelectron spectroscopy analysis of MP and CMP AlN substrates indicated the presence of a surface hydroxide layer composed of mixed aluminum oxide hydroxide and aluminum trihydroxide. Wet etching with sulfuric and phosphoric acid mixtures reduced the amount of surface hydroxide. Ammonia annealing at 1250 °C converted the substrate hydroxide layer to AlN and increased the rms roughness of MP and CMP AlN substrates to 2.2 nm and 0.2 nm, respectively. AlN epitaxial layers were deposited at 1100–1250 °C under 20 Torr total pressure with a V/III ratio of 180–300 in either N2 or H2 diluent. High-resolution x-ray diffraction measurements revealed that AlN epitaxial layers deposited on MP substrates were strained due to nucleation and coalescence of AlN grains on the mechanically damaged surfaces. AlN deposited on CMP substrates was epitaxial and strain-free. Thermodynamic models for nitridation and AlN deposition were also proposed and evaluated.

Preparation of oriented Al-N nanometer thin films by microwave plasma-enhanced chemical vapor deposition

〈0001〉-oriented growth of AlN films on Si(111) by microwave plasma CVD with AlBr3NH3N2 system

Preparation of AIN Thin Film by DC Sputtering on SiO2/Si and Analysis of Microstructure

Rate-limiting process and growth kinetics of AlN thin films by microwave plasma CVD with AlBr3-NH3-N2 system

A study of sputtering process for nanocrystalline FeAlN soft magnetic thin films

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Review on Deposition of C-Axis Oriented AlN Films by Reactive Magnetron Sputtering

The growth mechanism of 〈1010〉 oriented AlN thin films by low-frequency plasma-enhanced metalorganic chemical vapour deposition process

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Study of preparation of AlN Thin Films for FBAR Application by RF Sputtering

The Preparation and Characterization of Preferred (110) Orientation Aluminum Nitride Thin Films on Si (100) Substrates by Pulsed Laser Deposition

The Preparation of Scaln(002) Alloy Thin Films Deposited on Si(100) Substrates by Dc Reactive Magnetron Sputtering

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Ultra-violet Light Assisted Reactive RF Magnetron Sputtering Deposition of AlN Thin Films at Room Temperature

Growth of AIN Films by RF Reactive Magnetron Sputtering for Film-Bulk-Acoustic-Wave-Resonator Fabrication

Surface Preparation and Homoepitaxial Deposition of AlN on (0001)-Oriented AlN Substrates by Metalorganic Chemical Vapor Deposition

Morphological Properties of AlN Piezoelectric Thin Films Deposited by DC Reactive Magnetron Sputtering

Studies on the Effects of the Different Substrates on the Structures of AlN Thin Films

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Growth of Highly C-Axis Oriented AlN Films at Water Cooling Condition

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD