Abstract:In this work, the epitaxial semipolar (11–22) AlN was prepared on nonpolar m-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was investigated upon increasing AlN thickness and annealing duration. The annealing operation intensively resets the lattice and improves the crystalline quality. By varying the film thickness, the contribution from the AlN-sapphire interface on crystalline quality and lattice parameters during the annealing process was investigated, and its contribution was found to be not so obvious when the thickness increased from 300 nm to 1000 nm. When the annealing was performed under durations from 1 to 5 h, the crystalline quality was found unchanged; meanwhile, the evolution of morphology was pronounced, and it means the crystalline reorganization happens prior to morphology reset. Finally, the annealing treatment enabled a zig-zag morphology on the AlN template along the sapphire [0001] direction in the plane, which potentially affects the subsequent device epitaxy process. Therefore, our results act as important experience for the semipolar nitride semiconductor laser device preparation, particularly for the epitaxy of microcavity structure through providing the crystalline evolution.

Formation mechanism of (10-13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Nucleation and growth of (10 ͞ 11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique

The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

The In-Plane-Two-Folders Symmetric <i>a</i>-Plane AlN Epitaxy on <i>r</i>-Plane Sapphire Substrate

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Defect structure of high temperature hydride vapor phase epitaxy–grown epitaxial (0 0 0 1) AlN/sapphire using growth mode modification process

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

High Quality AlN Epilayers Grown on Nitrided Sapphire by Metal Organic Chemical Vapor Deposition

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Nucleation And Growth Of (10(1)Over-Bar1) Semi-Polar Aln On (0001) Aln By Hydride Vapor Phase Epitaxy

2-inch semi-polar (11̄2) AlN templates prepared by high-temperature hydride vapor phase epitaxy

The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

Nucleation Mechanism for Epitaxial Growth of Aluminum Films on Sapphire Substrates by Molecular Beam Epitaxy

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

EPITAXIAL GROWTH OF AlN AND NbN FILMS ON (111) MgO SUBSTRATE

Epitaxial Growth And Structural Analysis Of Aln/Gan Heterostructures