Study on AlN Passivation Layer Grown by Magnetic Sputtering

陈国强,陈敦军
DOI: https://doi.org/10.3969/j.issn.1672-2558.2009.01.007
2009-01-01
Abstract:Based on the high frequency C-V curve of the AlGaN/GaN heterostructures passivated with AlN and Si3N4 dielectric films,calculation on the charge density of the interface between the passivation layer and the AlGaN barrier layer was done in this paper.The results show that more interface charge is found in the AlN passivated barrier layer than the Si3N4 passivated one,with the AlN film containing more removable ions.The quality of AlN passivation film deposited by magnetic sputtering at room temperature was discussed according to I-V curve.Compared with Si3N4 film,AlN passivation film indicates poor insulating property.The possible reason is that the incomplete reaction between the sputtering Al atoms and Natoms during the growing process resulted in the incompact structure of the deposited AlN film which contained more electron tunnel channels.Therefore,AlN passivation film is able to be improved by changing reaction conditions.
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