Abstract:The electrical and optical stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) related to the channel composition (the concentration of oxygen vacancy, V-O(2+)) and gate dielectrics are discussed. With the filling of V-O(2+), the electron density (Ne) in a-IGZO decreases from 7.5 to 3.8 (x10(16)cm(-3)) with the increase of Fermi level and decrease of density of deep charged traps, and therefore the electrical stability of TFTs decreases from A Vth of 4.5 to 10V. The optical stability of a-IGZO TFTs is also sensitive to the V-O(2+). With the increase of V-O(2+) the absorption increases and Eg decreases for a-IGZO, therefore the number of generating photoelectrons increases and the stability of TFT. decreases. The SiNx-gated TFT shows good electrical stability, but its optical stability is an issue, which shows a larger off-state photo leakage current (Delta I-d similar to 13 mu A) and decrease of Vth (vertical bar Delta V-th vertical bar>14V) than those of the SiO2-gated TFT (Delta I-d similar to 12 nA, vertical bar Delta V-th vertical bar similar to 8V). The model of charge trapping at the interface of gate dielectric/a-IGZO is only valid for the mechanism of electrical stability. It is proposed that due to the larger absorption of visible light of SiNX gate dielectric, and the smaller Delta Ev between SiNX and a-IGZO film, the photo created holes carriers in a-IGZO.chginel can be injected more easily into SiNX during light on resulting a significant increase of N-e in a-IGZO, therefore an apparent decrease of V-th for TFT.

Interfacial Structures and Properties of SiN Layer in a-Si Thin Film Transistors

Silicon Doping and N2 Annealing Effects on Zn3N2 Thin Film Transistors

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Study on the AlN/Si Interface Properties

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Enhancement in electrical properties of dual-active-layer amorphous SiZnSnO/SiInZnO thin film transistors

Microstructures and Optical Properties of SiNx Films

The Influence of Channel Layer Thickness on the Electrical Properties of Zno Tfts

Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors

Effects of SiON/III-nitride Interface Properties on Device Performances of GaN-based Power Field-Effect Transistors

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Enhanced Electrical Stability of Thin Film Transistors Based on Nanocrystalline Silicon Films

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap

Effect of Etching Stop Layer on Characteristics of Amorphous Igzo Thin Film Transistor Fabricated at Low Temperature

Low-Temperature Materials And Thin Film Transistors For Flexible Electronics

Study on the AlN/Si(111) interface properties

Si-incorporated amorphous indium oxide thin-film transistors