Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Ultralow RF Loss for Si-Based GaN Materials with a Variable Power Phosphorus Ion Implantation Method

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application.

Low RF Loss and Low Dislocation Density of GaN Grown on High-Resistivity Si Substrates

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

RF Loss Reduction by a Carbon-Regulated Si Substrate Engineering in GaN-based HEMT Buffer Stacks

More Than 60% RF Loss Reduction and Improved Crystal Quality of GaN-on-Si Achieved by In-Situ Doping Tert-Butylphosphorus

Al diffusion at AlN/Si interface and its suppression through substrate nitridation

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Low radio frequency loss and buffer-free GaN directly on physical-vapor-deposition AlN/Si templates

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure