Abstract:Compared with silicon and silicon carbide devices, the unique electrical and structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme for the high-voltage lateral GaN HEMT dies without bonding wires. Based on the proposed integration scheme, a compact 650 V/30 A GaN power module with low parasitic parameters and high thermal performance is designed. The GaN dies are sandwiched between two ceramic substrates to improve thermal performance and ensure consistent thermal expansion coefficients. The multiple copper layer structure is used to increase wiring flexibility to reduce parasitic parameters. The design of gate and power loop layouts is discussed, and the common-mode (CM) capacitance is optimized. A comprehensive reliability evaluation is also carried out for this integration scheme. Finally, a double-sided cooling 650 V/30 A full-bridge GaN power module with 2.4 cm×1.3 cm×0.17 cm is fabricated. The thermal resistance is reduced by 30%–48% compared with the conventional single-sided cooling module. The power loop and gate loop inductances are reduced to 0.94 nH and 2 nH, respectively, and the CM capacitance is limited to 2.5 pF. The maximum dv/dt of the drain–source voltage is high as 150 V/ns with only 10% overshoot. Based on the power module, a 3.3-kW two-phase interleaved buck converter is developed. It has 820 W/in3 power density and 98.85% peak efficiency.

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk Between High-Side and Low-Side HEMTs

Virtual-Body P-Gan Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation

GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions

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A GaN HEMT Integrated Power Module with Silver Sintering Processes

TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

600-V P-Gan Gate HEMT with Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

GaN on Engineered Bulk Si (Gan-on-ebus) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits

GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

Metal/Insulator/p-GaN Gate Virtual-Body HEMT for Large Gate Swing and Effective Hole Injection

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation Between High-side and Low-side Transistors

Monolithic Integration of Gate Driver and Protection Modules with P-GaN Gate Power HEMTs

Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure