Abstract:Conventional silicon (Si)-based power devices face physical limitations-such as switching speed and energy efficiency-which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties-such as low ON-resistance and fast switching-and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems-for example, large lattice and thermal mismatches, as well as 'melt-back etching' at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

GaN on Engineered Bulk Si (Gan-on-ebus) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits

A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk Between High-Side and Low-Side HEMTs

Substrate and Trench Design for GaN-on-EBUS Power IC Platform

GaN on Engineered Bulk Silicon Power Integration Platform With Avalanche Capability Enabled by Built-in Si PN Junctions

Substrate and Trench Design for GaN-on-EBUS Power IC Platform Considering Output Capacitance and Isolation Between High-side and Low-side Transistors

Substrate Effects in GaN-on-Si Integrated Bridge Circuit and Proposal of Engineered Bulk Silicon Substrate for GaN Power ICs

GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution

650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

TCAD Study on Suppression of Substrate-Induced Degradation in GaN-on-Si Integrated Half-Bridge Circuit by Local Si Lateral Etch

High Performance GaN-based Monolithic Bidirectional Switch Using Diode Bridges

Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

Enhancement-mode AlGaN/GaN HEMTs on Silicon Substrate

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

GaN-based Power High-Electron-mobility Transistors on Si Substrates: from Materials to Devices

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

A non-Ohmic normally-off GaN monolithic bidirectional switch with MIS field effect schottky tunnel junction