Abstract:III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have demonstrated significant potential in the next-generation high-power electronic devices due to their exceptional gate reliability. This study presents a comprehensive investigation of threshold voltage (VTH) instability in III-nitride heterostructure-based MIS-HEMTs, with a specific emphasis on the interfaces of the multi-heterostructures. Two widely studied amorphous materials, namely, Al2O3 and SiNx, have been extensively examined as primary gate insulators in GaN-based MIS-HEMTs. To efficiently remove native oxides from the (Al)GaN surface, a novel in situ high-temperature remote plasma pretreatment (RPP) technique has been developed. This technique involves sequential application of NH3/N2 plasmas on the (Al)GaN surface before depositing the gate insulators using plasma-enhanced atomic layer deposition. The remarkable RPP process has proven to be a highly effective method for revealing atomic steps on the GaN surface, irrespective of whether the surface has undergone oxidation or etching processes. To further enhance the interface quality and potentially reduce bulk traps in the gate insulator, optimization of deposition temperature and post-deposition annealing conditions have been explored. Additionally, an electron-blocking layer, such as SiON, is incorporated into the MIS-HEMTs to prevent electron injection into bulk traps within the insulator. Novel characterization techniques including constant-capacitance and isothermal-mode deep-level transient spectroscopy have also been developed to explore the failure mechanisms in MIS-HEMTs. These techniques allow for the differentiation between bulk traps in the GaN epitaxy and those present within the gate insulators. This in-depth physical understanding provides valuable insights into the sources of failure in GaN-based MIS-HEMTs.

Quasi-bipolar Channel Modulation Instability Analysis for P-GaN Gate High Electron Mobility Transistor

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Investigations of the gate-instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs

The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

Impact of Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Buffer leakage induced pre-breakdown mechanism for AlGaN/GaN HEMTs on Si

Physical Insight into the Abnormal VTH Instability of Schottky P-Gan HEMTs under High-Frequency Operation

Physical insight into the abnormal V TH instability of Schottky p -GaN HEMTs under high-frequency operation

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT