Abstract:III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial quality compared to thin films. However, few reports break the limitation of using bulk crystalline materials as substrates for epitaxial growth of high-quality photonic 1D components, making monolithic integration of III-V components on arbitrary substrates challenging. In this work, we show that the growth of self-catalyzed GaAsSb nanowires on graphitic substrates can be promoted by creating step edges of monolayer thickness on kish graphite before the growth. By further alternating the deposition sequence of the group-III element Al and the group-V elements As and Sb, it was found that triangular crystallites form when Al is deposited first. This indicates that the surface binding energy between the graphitic surface and the III-V nucleus profoundly influences the epitaxial growth of III-V materials on graphitic surfaces. Using the optimized growth recipe with an AlAsSb buffer nuclei, vertical [111]-oriented GaAsSb/GaAs nanowires with GaAsSb-based multiple axial superlattices were grown on exfoliated graphite, which was attached to a (001) AlAs/GaAs distributed Bragg reflector (DBR) using the simple Scotch tape method. Fabry-Pérot resonance modes were observed under optical excitation at room temperature, indicating a successful monolithic integration with optical feedback from the DBR system. These results demonstrate the great potential for flexible integration of high-efficiency III-V nanowire photonic devices on arbitrary photonic platforms using a 2D material buffer layer, e.g., graphene, without breaking the orientation registry.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to grow high - quality III - V semiconductor nanowires, especially GaAsSb nanowires, on a graphene or graphite substrate in order to achieve flexible integration with any photonics platform. Specifically, the paper focuses on the following aspects: 1. **Overcoming the inertness of the graphene surface**: Due to the chemical inertness of the graphene or graphite surface (i.e., the lack of dangling bonds), it is very difficult to directly grow III - V semiconductor nanowires on these surfaces. The paper promotes the nucleation and growth of nanowires by creating step edges with a single - layer thickness or using an AlAsSb buffer layer. 2. **Optimizing growth conditions**: The paper has studied in detail the effects of different growth conditions on the nucleation and growth of GaAsSb nanowires, including temperature, precursor flux, and deposition sequence, etc. By optimizing these conditions, the growth of high - density vertical [111] - oriented GaAsSb nanowires has been achieved. 3. **Achieving monolithic integration**: The paper shows how to transfer graphene flakes onto a distributed Bragg reflector (DBR) by a simple Scotch - tape method, thereby achieving the monolithic integration of [111] - oriented GaAsSb nanowires and [001] - oriented DBR. In optical pumping experiments, Fabry - Pérot (FP) resonance modes have been observed in this integration, indicating that optical feedback has been successfully achieved. 4. **Potential applications**: The paper points out that these results show great potential for flexibly integrating efficient III - V nanowire photonic devices on any photonics platform using two - dimensional materials (such as graphene) as buffer layers, for example, for vertical - emitting LEDs and lasers. ### Key formula A key formula mentioned in the paper is the calculation of the formation enthalpy of III - V nuclei on the graphene surface: \[ \Delta G=-A\cdot h\cdot\Delta\mu + P\cdot h\cdot\gamma_{lL}+A\cdot(\gamma_{NL}-\gamma_{GL}+\gamma_{GN}) \] where: - \(A\) is the top - surface area of III - V nuclei on the graphene surface. - \(h\) is the height of III - V nuclei. - \(P\) is the perimeter of III - V nuclei. - \(\Delta\mu\) is the supersaturation of III - V elements in Ga droplets. - \(\gamma_{lL}\) and \(\gamma_{NL}\) are the energies of the nucleus - liquid interface and the top interface respectively. - \(\gamma_{GL}\) and \(\gamma_{GN}\) are the energies of the graphene - liquid interface and the graphene - nucleus interface respectively. This formula reveals the important influence of surface energy and supersaturation on the nucleation and growth of III - V nanowires. By adjusting these parameters, the vertical growth of nanowires can be effectively promoted.

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