Abstract:Highly efficient electrically injected light source on exact Si(100) has been the bottleneck of Si photonics for decades. InGaN-based laser with a direct bandgap may serve as an efficient on-chip light source. But InGaN-based laser with a p-side ridge waveguide usually has a large electrical resistance and operation voltage, converting electricity into excessive Joule heat. The low wall plug efficiency, together with a large thermal resistance, leads to a high junction temperature, severely degrading device performance. Here, we proposed and fabricated a new laser structure with the ridge waveguide inverted from p-side to n-side. The differential electrical resistance and threshold voltage were slashed by 48% and 1.4 V, respectively. The thermal resistance and junction temperature were also reduced by 8 K/W and 25 °C, respectively. As a result, InGaN-based laser on exact Si(100) has been demonstrated under room-temperature continuous-wave current injection, which is fully compatible with Si-based microelectronics and a photonics platform.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01061?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01061</a>.Section 1, The detailed epitaxial structures of the nRW-LD and pRW-LD wafers; Section 2, The device fabrication process of the nRW-LDs; Section 3, The optical field distribution of nRW-LDs; Section 4, The detailed description for the measurement of junction temperature; Section 5, The statistic measurement results of the threshold current of nRW-LDs; Section 6, The detailed information on simulation study about thermal characteristics (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01061/suppl_file/ph0c01061_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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