Electrically Pumped Epitaxially Regrown GaSb‐Based Type‐I Quantum‐Well Surface‐Emitting Lasers with Buried High‐Index‐Contrast Photonic Crystal Layer

Leon Shterengas,Ruiyan Liu,Gela Kipshidze,Aaron Stein,Won Jae Lee,Takashi Hosoda,Dmitri N. Zakharov,Kim Kisslinger,Gregory Belenky

DOI: https://doi.org/10.1002/pssr.202100425

2021-10-07

Abstract:Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSEL) emitting near 2 and 2.6 µm have been designed, fabricated, and characterized. A high-index-contrast photonic crystal layer was incorporated into the GaSb-based laser heterostructure by air-hole-retaining epitaxial regrowth. A square lattice of triangular holes was etched in the top waveguide core layer of the incomplete laser heterostructure. The nano-patterned surface was subsequently cleaned and regrown with AlGaAsSb p-cladding material. Transmission electron microscopy studies demonstrated uniform regrowth over the nano-patterned GaSb surface. The selected regrowth regimes yielded buried 2D array of the elongated air-holes. The diode PCSELs based on moderately etched nano-patterns demonstrated band edge lasing near 2 µm up to room temperatures. The cascade diode PCSELs operated near 2.6 µm with minimum threshold current densities of about 500 A/cm2 achieved at 180 K. The devices generated mW level output in narrow divergence beam emitted from the window in substrate contact. The angle-resolved electroluminescence measurements revealed four-subband band structure with apparent photonic bandgap corresponding to the buried high-index-contrast square photonic crystal layer. The PCSELs made of heterostructures supporting two modes in the vertical direction demonstrated two sets of subbands showing anti-crossing-like interaction.This article is protected by copyright. All rights reserved.