Abstract:Finding a Si-based material with strong optical activity at the band-edge remains a challenge despite decades of research. The interest lies in combining optical and electronic functions on the same wafer, while retaining the extraordinary know-how developed for Si. However, Si is an indirect-gap material. The conservation of crystal momentum mandates that optical activity at the band-edge includes a phonon, on top of an electron-hole pair, and hence photon absorption and emission remain fairly unlikely events requiring optically rather thick samples. A promising avenue to convert Si-based materials to a strong light-absorber/emitter is to combine the effects on the band-structure of both nanostructuring and alloying. The number of possible configurations, however, shows a combinatorial explosion. Furthermore, whereas it is possible to readily identify the configurations that are formally direct in the momentum space (due to band-folding) yet do not have a dipole-allowed transition at threshold, the problem becomes not just calculation of band structure but also calculation of absorption strength. Using a combination of a genetic algorithm and a semiempirical pseudopotential Hamiltonian for describing the electronic structures, we have explored hundreds of thousands of possible coaxial core/multishell Si/Ge nanowires with the orientation of [001], [110], and [111], discovering some "magic sequences" of core followed by specific Si/Ge multishells, which can offer both a direct bandgap and a strong oscillator strength. The search has revealed a few simple design principles: (i) the Ge core is superior to the Si core in producing strong bandgap transition; (ii) [001] and [110] orientations have direct bandgap, whereas the [111] orientation does not; (iii) multishell nanowires can allow for greater optical activity by as much as an order of magnitude over plain nanowires; (iv) the main motif of the winning configurations giving direct allowed transitions involves rather thin Si shell embedded within wide Ge shells. We discuss the physical origin of the enhanced optical activity, as well as the effect of possible experimental structural imperfections on optical activity in our candidate core/multishell nanowires.

Growth and optical properties of axial hybrid III-V/Si nanowires

Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices

Engineering Efficient Light Sources for Silicon Photonics: III-V Nano-heterostructures Monolithically Grown on Silicon

Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

III-V Compound Semiconductor Nanowires for Optoelectronic Applications

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

Metamorphic III–V Semiconductor Lasers Grown on Silicon

Quantum Dot Lasers on Silicon by Direct Epitaxial Growth

Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

High-speed III-V nanowire photodetector monolithically integrated on Si

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Tailoring the Optical Characteristics of Microsized InP Nanoneedles Directly Grown on Silicon

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Single photon emitters in thin GaAsN nanowire tubes grown on Si

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Single Crystal Silicon-Germanium-On-Insulator for High Density Optical Interconnects

Genomic Design of Strong Direct-Gap Optical Transition in Si/Ge Core/multishell Nanowires.

III–V nanowires and nanowire optoelectronic devices

Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition