Abstract:Ion irradiation is a key tool for controlling the nanostructure, phase content, and physical properties of refractory ceramic thin films grown at low temperatures by magnetron sputtering. However, in contrast to gas-ion bombardment, the effects of metal-ion irradiation on properties of refractory ceramic thin films have not been extensively studied due to (i) low metal-ion concentrations (a few percents) during standard direct-current magnetron sputtering (DCMS) and (ii) difficulties in separating metal-ion from gas-ion fluxes. Recently, the situation has changed dramatically, thanks to the development of high-power impulse magnetron sputtering (HiPIMS), which provides highly-ionized metal-ion plasmas. In addition, careful choice of sputtering conditions allows exploitation of gas-rarefaction effects such that the charge state, energy, and momentum of metal ions incident at the growing film surface can be tuned. This is possible via the use of pulsed substrate bias, synchronized to the metal-ion-rich portion of each HiPIMS pulse. In this review, the authors begin by summarizing the results of time-resolved mass spectrometry analyses performed at the substrate position during HiPIMS and HiPIMS/DCMS cosputtering of transition-metal (TM) targets in Ar and Ar/N2 atmospheres. Knowledge of the temporal evolution of metal- and gas-ion fluxes is essential for precise control of the incident metal-ion energy and for minimizing the role of gas-ion irradiation. Next, the authors review results on the growth of binary, pseudobinary, and pseudoternary TM nitride alloys by metal-ion-synchronized HiPIMS. In contrast to gas ions, a fraction of which are trapped at interstitial sites, metal ions are primarily incorporated at lattice sites resulting in much lower compressive stresses. In addition, the closer mass match with the film-forming species results in more efficient momentum transfer and provides the recoil density and energy necessary to eliminate film porosity at low deposition temperatures. Several novel film-growth pathways have been demonstrated: (i) nanostructured N-doped bcc-CrN0.05 films combining properties typically associated with both metals and ceramics, (ii) fully-dense, hard, and stress-free Ti0.39Al0.61N, (iii) single-phase cubic Ti1−xSixN with the highest reported SiN concentrations, (iv) unprecedented AlN supersaturation in single-phase NaCl-structure V1−xAlxN, and (v) a dramatic increase in the hardness, due to selective heavy-metal ion bombardment during growth, of dense Ti0.92Ta0.08N films deposited with no external heating.

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Group-III nitride heteroepitaxial films approaching bulk-class quality

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film

Atomic layer deposition and application of group III nitrides semiconductor and their alloys

III-nitride Epitaxy by Ion Filtered Inductively Coupled Plasma MOCVD

The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation

Recent Progress in Metal-Organic Chemical Vapor Deposition of (000(1)Over-Bar) N-Polar Group-Iii Nitrides

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Van der Waals Epitaxy of III-Nitrides and Its Applications

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

Achievement of Polarity Reversion from Al(Ga)-polar to N-polar for AlGaN Film on AlN Seeding Layer Grown by a Novel Flow‐modulation Technology

Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materials

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Experimental Determination of Giant Polarization in Wurtzite III-Nitride Semiconductors

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

A Low-Cost and Convenient Route of Fabricating GaN Films with P-type Mixed Microcrystalline and Amorphous Structure Deposited Via Ga Target of Magnetron Sputtering

Polarization properties of wurtzite III nitride indicate the principle of polarization engineering