Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane

Restrictions of Si-based Ge nanodots from porous alumina membranes

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Heteroepitaxy of Ge on Si(001) with Pits and Windows Transferred from Free-Standing Porous Alumina Mask

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Optimal Growth of Ge-rich Dots on Si(001) Substrates with Hexagonal Packed Pit Patterns.

Synthesis and Optical Properties of Germanium Nanorod Array Fabricated on Porous Anodic Alumina and Si-Based Templates

Phosphorus-mediated growth of Ge quantum dots on Si(001)

Study of Si and Ge growth on Si(100) surface

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Long-Range-Ordered Ag Nanodot Arrays Grown on Gaas Substrate Using Nanoporous Alumina Mask

Area preferential nucleation of Ge nano-dots on nano-size porous silicon

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Growth of Ge Nanowires by Alumina Template

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Selective epitaxial growth of GaAs on Ge by MOCVD