Abstract:We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

Control of the crystal structure of InAs nanowires by tuning contributions of adatom diffusion.

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Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Sb-Induced Phase Control of Inassb Nanowires Grown by Molecular Beam Epitaxy

Growth of InAs NWs with controlled morphology by CVD

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

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Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

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Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Si Doping-Induced Phase Control, Formation of P-Type and N-Type GaAs Nanowires

Effect of Nanohole Size on Selective Area Growth of InAs Nanowire Arrays on Si Substrates

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The effect of nanoscale steps on the self-catalyzed position-controlled InAs nanowire growth

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Crystallographically Driven Au Catalyst Movement During Growth of Inas/Gaas Axial Nanowire Heterostructures

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Phase Selection in Self-catalyzed GaAs Nanowires