Abstract:Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.

Crystal Phase Control in Self-Catalyzed GaAs Nanowires Grown on Pre-Etched Si Substrates

Phase Selection in Self-catalyzed GaAs Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

Si Doping-Induced Phase Control, Formation of P-Type and N-Type GaAs Nanowires

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Interface dynamics and crystal phase switching in GaAs nanowires

Large-scale and Uniform Preparation of Pure-Phase Wurtzite GaAs NWs on Non-Crystalline Substrates.

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Crystal-phase Control of GaAs–GaAsSb Core–shell/axial Nanowire Heterostructures by a Two-Step Growth Method

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Growth of High-Quality Self-Catalyzed Core-Shell Gaasp Nanowires on Si Substrates

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Phase purification of GaAs nanowires by prolonging the growth duration in MBE

Wurtzite–zincblende superlattices in InAs nanowires using a supply interruption method

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Growth of High-Crystallinity Uniform GaAs Nanowire Arrays by Molecular Beam Epitaxy*