Abstract:In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin, uniform and orientation-controlled nanowires (NWs), there is limited report until now addressing their orientation-dependent properties in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility 〈111〉 -oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by the newly developed surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd 5 Ga 4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd 5 Ga 4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. Over 95% high crystalline quality NWs were grown in 〈111〉 orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ~330 cm 2 V -1 s -1 , close to the mobility limit for a NW channel diameter of ~30 nm with a free carrier concentration of ~10 18 cm -3 . This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

Manipulated Growth of Gaas Nanowires: Controllable Crystal Quality and Growth Orientations Via A Supersaturation-Controlled Engineering Process

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Modulating the Morphology and Electrical Properties of Gaas Nanowires Via Catalyst Stabilization by Oxygen

Controllable III–V nanowire growth via catalyst epitaxy

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Growth of oriented GaN nanowires by controlling nucleation conditions

Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

<110>-growth orientation dependence of Ga<sub>2</sub>O<sub>3</sub> nanowires on Cu<sub>3</sub>As seeds via vapor-solid-solid mechanism

Controllable Ga/Ga 2 O 3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Large-scale and Uniform Preparation of Pure-Phase Wurtzite GaAs NWs on Non-Crystalline Substrates.

Nonpolar GaAs Nanowires Catalyzed by Cu 5 As 2 : Insights into As Layer Epitaxy

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy.

Orientation Controlled GaSb Nanowires: from Growth to Application