Abstract:Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics 1 . Elucidation of the vapour–liquid–solid growth mechanism 2 has already enabled precise control over nanowire position and size 1 , 3 , 4 , 5 , 6 , 7 , 8 , yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal–organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) γ-LiAlO 2 and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [11̄0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Growth of oriented GaN nanowires by controlling nucleation conditions

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Control of growth orientation of GaN nanowires

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Manipulated Growth of Gaas Nanowires: Controllable Crystal Quality and Growth Orientations Via A Supersaturation-Controlled Engineering Process

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Growth Mechanisms of GaN Nanorods

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Growth of GaN Nanowires on Graphene

Controllable Ga/Ga 2 O 3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Catalyst-free Synthesis of Well-Aligned ZnO Nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N Substrates.

Crystallographic Alignment of High Density Gallium Nitride Nanowire Arrays

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Systematic study of vertically aligned ZnO nanowire arrays synthesized on p-GaN substrate by hydrothermal method

Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer

Understanding homoepitaxial growth of horizontal kinked GaN nanowires

Growth of Pure Zinc-Blende Gaas(P) Core-Shell Nanowires with Highly Regular Morphology

Controlled Growth of Well-Aligned Zno Mirco/Nanorod Arrays on Gan Substrates Using A Novel Solution Method