Abstract:Reliable control in the crystal quality of synthesized III-V nanowires (NWs) is particularly important to manipulate their corresponding electronic transport properties for technological applications. In this report, a "two-step" growth process is adopted to achieve single-crystalline GaAs NWs, where an initial high-temperature nucleation process is employed to ensure the formation of high Ga supersaturated Au7Ga3 and Au2Ga alloy seeds, instead of the low Ga supersaturated Au7Ga2 seeds observed in the conventional "single-step" growth. These two-step NWs are long (>60 μm) and thick (>80 nm) with the minimal defect concentrations and uniform growth orientations. Importantly, these NWs exhibit p-type conductivity as compared to the single-step grown n-type NWs for the same diameter range. This NW conductivity difference (p- versus n-channel) is shown to originate from the donor-like crystal defects, such as As precipitates, induced by the low Ga supersaturated multicrystalline Au7Ga2 alloy seeds. Then the well-controlled crystal quality for desired electronic properties is further explored in the application of large-scale p-type GaAs NW parallel array FETs as well as the integration of both p- and n-type GaAs NWs into CMOS inverters. All these illustrate the successful control of NW crystal defects and corresponding electronic transport properties via the manipulation of Ga supersaturation in the catalytic alloy tips with different preparation methods. The understanding of this relationship between NW crystal quality and electronic transport properties is critical and preferential to the future development of nanoelectronic materials, circuit design, and fabrication.

Nonpolar GaAs Nanowires Catalyzed by Cu5As2: Insights into As Layer Epitaxy.

Nonpolar GaAs Nanowires Catalyzed by Cu 5 As 2 : Insights into As Layer Epitaxy

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

<110>-growth orientation dependence of Ga<sub>2</sub>O<sub>3</sub> nanowires on Cu<sub>3</sub>As seeds via vapor-solid-solid mechanism

-growth orientation dependence of Ga2O3 nanowires on Cu3As seeds via vapor-solid-solid mechanism

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

Growth of Ga2O3 Nanowires Via Cu-As-Ga Ternary Phase Diagram

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates

Manipulated Growth of Gaas Nanowires: Controllable Crystal Quality and Growth Orientations Via A Supersaturation-Controlled Engineering Process

Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Catalyst Orientation-Induced Growth of Defect-Free Zinc-Blende Structured ⟨001̅⟩ InAs Nanowires.

GaAs nanowires: from manipulation of defect formation to controllable electronic transport properties.

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Controllable III–V nanowire growth via catalyst epitaxy

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Modulating the Morphology and Electrical Properties of Gaas Nanowires Via Catalyst Stabilization by Oxygen

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Epitaxial nanowires Evolution of Epitaxial InAs Nanowires on GaAs ( 111 ) B * *

Controllable Ga/Ga2O3 Nanowire Growth at High Temperatures Enabled by Au and Pd Quantum Dot Catalysts