Abstract:Copper–indium gallium disulfide (CIGS) is a good absorber for photovoltaic application. Thin films of CIGS were prepared by spray pyrolysis on glass substrates in the ambient atmosphere. The films were characterized by different techniques, such as structural, morphological, optical and electrical properties of CIGS films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), spectrophotometer and Hall effect, respectively. After optimization, the deposited films structure, grain size, and crystallinity became more important with an increase of annealing time at 370 °C for 20 min. Transmission electron microscopy (TEM) analysis shows that the interface sheets are well crystallized and the inter planer distance are 0.25 nm, 0.28 nm, and 0.36 nm. The atomic force microscopy (AFM) observation shows that the grain size and roughness can be tolerated by optimizing the annealing time. The strong absorbance and low transmittance were observed for the prepared films with a suitable energy bandgap about 1.46 eV. The Hall effect measurement system examined that CIGS films exhibited optimal electrical properties, resistivity, carrier mobility, and carrier concentration which were determined to be 4.22 × 106 Ω cm, 6.18 × 102 cm2 V−1 S−1 and 4.22 × 106 cm−3, respectively. The optoelectronic properties of CIGS material recommended being used for the photovoltaic application.

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Preparation and characterization of the CIGS thin films with double-graded band gap

Study on Two-Step Process of Preparing CIGS Films

Optoelectronic characterization of CuInGa(S)2 thin films grown by spray pyrolysis for photovoltaic application

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Fabrication of In-Situ Ti-doped CuGaS2 Thin Films for Intermediate Band Solar Cell Applications by Sputtering with CuGaS2:Ti Targets

Hybrid Density Functional Theory Study of Cu(In1−xGax)Se2 Band Structure for Solar Cell Application

Fabrication of Cu2Sn1-xGexS3 Thin-Film Solar Cells via Sulfurization of Cu2GeS3/Cu2SnS3 Stacked Precursors

Tailored Band Structure of Cu(In,Ga)Se2 Thin-Film Heterojunction Solar Cells: Depth Profiling of Defects and the Work Function.

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells.

Cu(In, Ga)(S, Se)2 electrodeposition and characterizations using improved electrolytes

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CuInS 2 thin films obtained by solid-state sulfurization