CuInS 2 thin films obtained by solid-state sulfurization

wei yao,yanlai wang,xiaojing wang,jun zhu,zhifang zhang,xiaojun yuan

DOI: https://doi.org/10.1016/j.mssp.2014.04.021

IF: 4.1

2014-01-01

Materials Science in Semiconductor Processing

Abstract:CuInS2 thin films were prepared by sulfurization of Cu–In precursor films through magnetron sputtering. The obtained films were characterized using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), UV–vis spectrophotometer and Hall Effect measurement. The results showed that the precursors films obtained at a sputtering power of 15W were more dense and smooth. The CuInS2 thin films sulfurized at 450°C for 20min demonstrated a typical chalcopyrite structure, with preferred orientation along the (112) plane and possessing 1.48eV direct band gap. The study also illustrated that the composition of thin films almost kept stable while the film formation conditions changed, like sulfurization temperature and time, etc. The value of the direct band gap would increase with sulfurization temperature heating up.