Abstract:In this study, a sputtering system was adopted for the preparation of Cu2ZnSnS4 (CZTS) thin films with high material quality. The system precisely controlled the elemental ratio in a copper-zinc-tin (CZT) precursor for contributing to the grain growth of CZTS crystallites, and reduced the detrimental formation of the Cu2-xS secondary phase during the high-temperature sulfurization process. The CZT precursor was prepared in a layer sequence of Zn/Sn/Cu/Zn, as the Cu-capping layer could protect the underlying Zn/Sn bilayer from volatilization during the high-temperature sulfurization. The CZT precursors were subjected to the sulfurization process at varied temperatures ranging from 480 to 560 °C for 20 min to form the CZTS thin film. In this study, the Cu/(Zn + Sn) and Zn/Sn ratios in the CZTS film were studied by energy dispersive X-ray spectroscopy measurements, and both ratios revealed elevations with an increasing sulfurization temperature, owing to the thermal volatilization of Zn and Sn. Thus, the formation of the undesirable Cu2-xS secondary phase was enhanced, and the surface roughness and density of voids on the CZTS thin films were increased. For a reduced Zn/Sn ratio with a reduced sulfurization temperature, the improved CZTS thin-film quality was demonstrated by the increased X-ray diffraction (XRD) and Raman intensity, along with the reduction of the XRD linewidth of the (112) CZTS crystal phase. A CZTS thin film with a sulfurization condition of 500 °C for 20 min showed a low Zn/Sn ratio (at 1.1), along with the features of a dense and smooth thin-film surface. Moreover, a reduced photoluminescence spectra full width at half maximum (FWHM) value of 92.7 meV was observed. In addition, for further improving the grain growth of CZTS, a pre-annealing process of a CZT precursor was conducted at a temperature of 350 °C for 30 min. An enhancement of the CZTS crystallite size with the stoichiometric formation of a CZTS phase and a reduced Cu2-XS phase was observed, indicating the superior material quality of the CZTS thin films.

Phases formation of Cu2ZnSnS4 thin films by sulfurizing stacked precursors by sputtering from CuZn and CuSn targets

Investigation of Zn/Sn ratio for improving the material quality of CZTS thin films with the reduction of Cu2-xS secondary phase

The Influence of Sulfurization Time and H2S Concentration on the Properties of Cu2ZnSnS4 Thin Films

High-sulfur Cu2ZnSn(S,Se)4 Films by Sulfurizing As-Deposited CZTSe Film: the Evolutions of Phase, Crystallinity and S/(S+Se) Ratio

Formation of Cu2SnS3 thin film by the heat treatment of electrodeposited SnS–Cu layers

Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

Effect of the stacking order, annealing temperature and atmosphere on crystal phase and optical properties of Cu2SnS3

Facile single-component precursor for Cu2ZnSnS4 with enhanced phase and composition controllability

Phase-controlled synthesis of Cu2ZnSnS4 nanocrystals: the role of reactivity between Zn and S.

Preparation of High-Quality Cu2ZnSnS4 Thin Films for Solar Cells Via the Improvement of Sulfur Partial Pressure Using a Static Annealing Sulfurization Approach

Fabrication of Cu2ZnSnS4 thin films using a ceramic quaternary target

Study on the Optimization of Cu-Zn-Sn-O to Prepare Cu2ZnSnS4 Thin Film via a Nano Ink Coating Method

Reaction Time and Film Thickness Effects on Phase Formation and Optical Properties of Solution Processed Cu2ZnSnS4 Thin Films

Effect of stacking sequence on the structural ordering and phase formation in the sequentially deposited copper zinc tin sulfide thin films

CuInS 2 thin films obtained by solid-state sulfurization

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Improving the efficiency of Cu2ZnSnS4 solar cells by promoting the homogeneous distribution of Sn element

Study of optical and structural properties of CZTS thin films using copper capping layer and sulfurization to correct stoichiometry.

Improved Cu2ZnSnS4 Solar Cell Performance by Multimetallic Stacked Nanolayers

Growth and properties of CuInS2 films by solid-state sulfurization

Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature