Abstract:Multi-layer crystallization and uncontrollable defects were the main factors that limiting the quality of Cu 2 ZnSn(S,Se) 4 (CZTSSe) films. Here a hybrid crystallization strategy was proposed to simultaneously improve the morphology and defect properties of CZTSSe film. Firstly, we found the variation of the microstructures (constitution, chemical environment of the elements, etc.) in precursor films can greatly alter the grain-growths of CZTSSe films. Detailed characterizations revealed that the chemical environment of S in the precursor film may influence the S-to-Se substitution of the film during the selenization process. This can further affect the grain-growth mechanism and the properties of CZTSSe film. While the S-to-Se substitution of the film mainly occurred below 500°C, the NaSe x on the surface of the film could dominate the grain-growth (Na-mechanism). For this mechanism, the CZTSSe film exhibited bi-layer morphology and relatively high band-tail energy, but shallow-acceptor was detected in the film. The solar cells based on the CZTSSe films reached the efficiency of 10.6%. As a comparison, liquid phase could be generated when the S-to-Se substitution of the film shifted to higher temperature (>500°C). In this condition, the grain-growth would be dominated by the liquid phase (LP-mechanism). Such mechanism can eliminate the multi-layer crystallization and reduce the band-tail energy, but the surface properties of the CZTSSe film was deteriorated and the formation of shallow-acceptor in CZTSSe was inhibited. The fabricated solar cells achieved the efficiency of 10.3%. Based on the results above, a bi-layer precursor film contained sub-layers with different microstructures was proposed to regulate the crystallization of CZTSSe. The co-existence of different microstructures in the precursor film could induce a hybrid grain-growth mechanism for the CZTSSe film (e.g., the Na-mechanism worked on the surface while the LP-mechanism worked in the bottom simultaneously). Such grain-growth mechanism can yield CZTSSe film with uniform morphology and favorable defect properties. The CZTSSe solar cells based on the hybrid grain-growth mechanism achieved the best efficiency of 12.6%. The investigation in this paper would provide new solutions for the crystallization regulation on CZTSSe photovoltaic material.

High-sulfur Cu2ZnSn(S,Se)4 Films by Sulfurizing As-Deposited CZTSe Film: the Evolutions of Phase, Crystallinity and S/(S+Se) Ratio

The Influence of Sulfurization Time and H2S Concentration on the Properties of Cu2ZnSnS4 Thin Films

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Effects of Selenization on Phase Transition and S/(S+Se) Ratios of As-Deposited Cu2ZnSnS4 Absorbers Sputtered by a Quaternary Target

Phases formation of Cu2ZnSnS4 thin films by sulfurizing stacked precursors by sputtering from CuZn and CuSn targets

Investigation of Zn/Sn ratio for improving the material quality of CZTS thin films with the reduction of Cu2-xS secondary phase

Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

Modification of crystallization in Cu2ZnSn(S,Se)4 films using Al2O3 capping layers

Sb Doping Strategy to Promote Growth and Suppress Defects in Solution-Processed CZTSSe Solar Cells for Improved Optoelectronic Performance

Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Single-step Preparation and Characterization of Cu2ZnSn(SxSe1−x)4 Thin Films Deposited by Pulsed Laser Deposition Method

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Effect of annealing temperature on the microstructural and optical properties of newly developed (Ag,Cu)2Zn(Sn,Ge)Se4 thin films

Preparation of High-Quality Cu2ZnSnS4 Thin Films for Solar Cells Via the Improvement of Sulfur Partial Pressure Using a Static Annealing Sulfurization Approach

An investigation on phase transition for as-sputtered Cu 2 ZnSnSe 4 absorbers during selenization

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios

Facile growth of Cu2ZnSn(SSe)4 thin films with controlled phase and microstructure evolution from green ethanol-based molecular solutions

Simultaneously improving the morphology and defect properties of CZTSSe film via hybrid grain-growth mechanism