Abstract:In preparing Cu2ZnSnSe4 (CZTSe) thin films, selenization at high Se pressure is likely to form a thick molybdenum diselenide (MoSe2) layer. An excessively thick MoSe2 layer degrades the performance of CZTSe solar cells. Annealing under low Se pressure has been suggested to prevent the formation of such a thick MoSe2 layer. However, the potential loss of Sn metal from CZTSe thin films at low Se pressure or high temperature raises the additional difficulty of controlling the compositions and phases of the films. Carefully controlling these selenization parameters to yield high-quality CZTSe thin films is important. This study investigates the loss of Sn and the formation of molybdenum diselenide in CZTSe thin films at low Se pressure. Three-step selenization at low Se pressure is performed on an electrodeposited Cu/Sn/Zn precursor to prepare high-quality CZTSe thin films. In the first step, rapid thermal annealing with a substrate temperature of 500°C and a low Se vapor pressure of 4.6Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and thus to obtain a Cu-poor and Zn-rich film. In the second step, a high annealing temperature of 570°C and an inert gas at high pressure was used to improve elemental diffusion and increase the uniformity of the elemental distribution. In the third step, thermal annealing with a substrate temperature of 500°C and a low Se vapor pressure of 4.6Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and to eliminate the impurity phase of SnSe (which was formed in the second step of annealing) on the surface of the CZTS films. The loss of Sn and the formation of molybdenum diselenide in the CZTSe thin films are negligible when this three-step selenization at low Se pressure is used. When the selenization parameters are properly controlled, CZTSe solar cells with an efficiency of as high as 8.2% can be obtained.

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

A CZTSe Solar Cell with 8.2% Power Conversion Efficiency Fabricated Using Electrodeposited Cu/Sn/Zn Precursor and a Three-Step Selenization Process at Low Se Pressure

Growth of Large Grain-Size Cu2ZnSn(SxSe1-x)4 Thin Films by Annealing Precursors Sputtered from a Single Quaternary Target for Solar Cells Application

Kesterite Cu2znsn(S,Se)(4) Solar Cells with Beyond 8% Efficiency by A Sol Gel and Selenization Process

Efficient Cu2ZnSn(Se,S)4 solar cells with 79% fill factor using two-step annealing

Fabrication of Cu2ZnSn(S,Se)4 thin film solar cells by selenization of reactively sputtered precursors

Growth of Cu2znsnse4 Film under Controllable Se Vapor Composition and Impact of Low Cu Content on Solar Cell Efficiency

10% Efficiency Cu2ZnSn(S,Se)4 Thin Film Solar Cells Fabricated by Magnetron Sputtering with Enlarged Depletion Region Width

Preparing Cu2ZnSnSe4 thin film solar cells based on selenium containing precursors

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

A Robust Approach to Fabricate CZTSSe Absorber Layer for Solar Cells Via a Self-Selenizations Process Conducted by Concentrated Selenium Solution

Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells

Segmented Control of Selenization Environment for High‐Quality Cu2ZnSn(S,Se)4 Films Toward Efficient Kesterite Solar Cells

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process

Effects of Selenization Conditions on Microstructure Evolution in Solution Processed Cu2ZnSn(S,Se)(4) Solar Cells

Characterization of Cu2ZnSnSe4 Solar Cells Prepared from Electrochemically Co-Deposited Cu–Zn–Sn Alloy

10.24% Efficiency of Flexible Cu2 ZnSn(S,Se)4 Solar Cells by Pre-Evaporation Selenization Technique

Surprising Efficiency Enhancement of Cu2ZnSn(S,Se)4 Solar Cells with Abnormal Zn/Sn Ratios

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios