Abstract:In this study, earth-abundant thin film Cu2ZnSnSe4 (CZTSe) solar cells were fabricated by the magnetron sputtering of a quaternary compound target. Precursor films were deposited in a designed chemical composition followed by a selenization process under the mixed atmosphere of an active gas, H2Se, and a carrier gas, Ar. Due to the existence of the Se element within the film, a relatively low concentration of H2Se was utilized to mainly crystallize the precursors and also supplement Se. To explore the selenization process, the as-deposited CZTSe absorbers were annealed at different temperatures. The results of X-ray diffraction (XRD) and Raman scattering spectroscopy measurements showed that the CZTSe grains continuously grew after selenization. In this study, when the absorbers were annealed at 575 degrees C, the CZTSe solar cells were obtained with the highest efficiency of 11.95%, with the open circuit voltage (V-OC) of 432.22 mV, short circuit current density (J(SC)) of 36.28 mA cm(-2) and fill factor (FF) of 76.21%. The photoluminescence (PL) spectrum indicates that the peak center underwent a red-shift from the band gap (E-g) of 90 meV. The analyses of fluctuation modules indicate that the electrostatic potential fluctuation is dominant for the band tail. The investigations demonstrate that sputtering of the Cu-Zn-Sn-Se quaternary compound target via the selenization process can be an effective and simple method for the fabrication of high-performance CZTSe solar cells.

Efficient Cu2ZnSn(Se,S)4 solar cells with 79% fill factor using two-step annealing

CZTSSe solar cell with an efficiency of 10.19% based on absorbers with homogeneous composition and structure using a novel two-step annealing process

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Exploring the optimal two-step selenization process to enhance the performance of ionic liquid solution based Cu2ZnSn(S,Se)4 thin film solar cells

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Influence of H2Se Concentration on Se-rich CZTSSe Absorbers Sputtered with a Ceramic Quaternary Target

10.24% Efficiency of Flexible Cu2 ZnSn(S,Se)4 Solar Cells by Pre-Evaporation Selenization Technique

Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

Preparation of Wide Bandgap CuGaSe2 Absorbers and Solar Cells by Sputtering a Selenium-Rich Ceramic Target and Annealing in a Selenium-Free Atmosphere

Significantly Improving the Crystal Growth of a Cu 2 ZnSn(S,Se) 4 Absorber Layer by Air-Annealing a Cu 2 ZnSnS 4 Precursor Thin Film

Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu2ZnSn(Se,S)4 Photovoltaics

Beyond 11% Efficient Cu2ZnSn(Se,S)(4) Thin Film Solar Cells by Cadmium Alloying

Improving the Performance of Cu2ZnSn(S,Se)4 Thin Film Solar Cells by SCAPS Simulation

Preparing Cu2ZnSnSe4 thin film solar cells based on selenium containing precursors

Preparation of wide bandgap CuGaSe 2 absorbers and solar cells by sputtering a selenium-rich ceramic target and annealing in a selenium-free atmosphere

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios