Abstract:Cd alloying pure sulfide kesterite solar cells by regulating the alloying concentration and the grain growth process systematically from Sn4+‐DMSO solution approach makes a large‐grain spanning absorber monolayer and significantly suppresses deep‐level defects. At the optimal concentration, a champion device with an efficiency of 12.3% is achieved with a record low open‐circuit voltage loss even without post heat treatment. Cd alloying has been theoretically proved to be an effective strategy to suppress Cu‐Zn antisite defects and related defect cluster for improving device performance of pure sulfide kesterite Cu2ZnSnS4 (CZTS) thin film solar cells. However, the potential of Cd alloying has not been fully realized by solely doping without further post heat‐treatment. Here, Cd alloying CZTS (Cu2(Zn,Cd)SnS4, CZCTS) is reported through dimethyl sulfoxide (DMSO) solution and how alloying concentration affects reaction path, grain growth, and electronic properties of the CZCTS absorbers is investigated. This study found that Cd can be incorporated into CZTS through direct phase transformation grain growth, which sufficiently suppresses band tailing. High quality CZCTS absorber films and efficient solar cells are fabricated within a wide range of alloy concentration. A champion CZCTS device with a power conversion efficiency of 12.3% is achieved at 35% Cd concentration without any post heat treatment, improved by over 70% compared to 7.0% of CZTS. This device exhibits a high VOC gain to the Shockley–Queisser (Voc/VocSQ = 59.7%), the lowest VOC deficit achieved in pure sulfide kesterite solar cells. The results demonstrate the importance of the Cd alloying strategy for mitigating band tailing and achieving high efficiency pure sulfide kesterite solar cells.

Beyond 11% Efficient Cu2ZnSn(Se,S)(4) Thin Film Solar Cells by Cadmium Alloying

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Compositional Dependence of Structural and Electronic Properties of Cu2ZnSn(S,Se)4alloys for Thin Film Solar Cells

Surprising Efficiency Enhancement of Cu 2 ZnSn(S,Se) 4 Solar Cells with Abnormal Zn/Sn Ratios

Enhancement of the photovoltaic performance of Cd-alloyed Cu2ZnSn(S,Se)4 films based on a low-cost water-based solution process

12.3% Efficient Low Voc Loss Pure Sulfide Kesterite Solar Cells from DMSO Solution via Cadmium Alloying

Improvement of Power Conversion Efficiency of Cu <sub>2</sub>znsn(s,se) <sub>4</sub> Solar Cells by Al Doped CdS

Structural, Electronic and Defect Properties of Cu 2 ZnSn(S,Se) 4 Alloys

Structural, Electronic and Defect Properties of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Alloys

Doping Behavior of Zn in CdS and Its Effect on the Power Conversion Efficiency of the Cu2ZnSn(S, Se)4 Solar Cell

Achieving 11.95% Efficient Cu2ZnSnSe4 Solar Cells Fabricated by Sputtering a Cu-Zn-Sn-Se Quaternary Compound Target with a Selenization Process

Exploring New Cadmium Salts to Enhance the Photovoltaic Conversion Efficiency of Cu 2 ZnSn(S,Se) 4 Solar Cells

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Optimizing the properties of Cu2ZnSn(S,Se)4 solar cells via cationic substitution with trace Ca

Mechanism of enhanced power conversion efficiency of Cu2ZnSn(S, Se)4 solar cell by cadmium surface diffusion doping

Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Cu2ZnSnSSe4 Solar Cells with 9.6% Efficiency Via Selenizing Cu-Zn-Sn-S Precursor Sputtered from a Quaternary Target

Formation of Alloyed Cu 2 Co x Zn 1- x Sn(S,Se) 4 Absorption Layer and Its Application in Solar Cells

Over 10% Efficiency Pure Sulfide Kesterite Solar Cells on Transparent Electrode with Cd-Ag Co-Alloying

All-Layer Sputtering-Free Cu2Zn1-xCdxSnS4 Solar Cell with Efficiency Exceeding 7.5%