Calcium-regulated parathyroid hormone release in primary hyperparathyroidism: studies in vitro with dispersed parathyroid cells.

E. Brown,D. Gardner,Murray F. Brennan,S. Marx,A. Spiegel,M. Attie,R. Downs,J. Doppman,G. Aurbach

DOI: https://doi.org/10.1016/0002-9343(79)90446-7

1979-06-01

Abstract:

What problem does this paper attempt to address?

12.3% Efficient Low Voc Loss Pure Sulfide Kesterite Solar Cells from DMSO Solution via Cadmium Alloying

Xiangyu Pan,Xinyu Li,Yuntian Yang,Chunxu Xiang,Aoqi Xu,Hongkun Liu,Weibo Yan,Wei Huang,Hao Xin

DOI: https://doi.org/10.1002/aenm.202301780

IF: 27.8

2023-08-26

Advanced Energy Materials

Abstract:Cd alloying pure sulfide kesterite solar cells by regulating the alloying concentration and the grain growth process systematically from Sn4+‐DMSO solution approach makes a large‐grain spanning absorber monolayer and significantly suppresses deep‐level defects. At the optimal concentration, a champion device with an efficiency of 12.3% is achieved with a record low open‐circuit voltage loss even without post heat treatment. Cd alloying has been theoretically proved to be an effective strategy to suppress Cu‐Zn antisite defects and related defect cluster for improving device performance of pure sulfide kesterite Cu2ZnSnS4 (CZTS) thin film solar cells. However, the potential of Cd alloying has not been fully realized by solely doping without further post heat‐treatment. Here, Cd alloying CZTS (Cu2(Zn,Cd)SnS4, CZCTS) is reported through dimethyl sulfoxide (DMSO) solution and how alloying concentration affects reaction path, grain growth, and electronic properties of the CZCTS absorbers is investigated. This study found that Cd can be incorporated into CZTS through direct phase transformation grain growth, which sufficiently suppresses band tailing. High quality CZCTS absorber films and efficient solar cells are fabricated within a wide range of alloy concentration. A champion CZCTS device with a power conversion efficiency of 12.3% is achieved at 35% Cd concentration without any post heat treatment, improved by over 70% compared to 7.0% of CZTS. This device exhibits a high VOC gain to the Shockley–Queisser (Voc/VocSQ = 59.7%), the lowest VOC deficit achieved in pure sulfide kesterite solar cells. The results demonstrate the importance of the Cd alloying strategy for mitigating band tailing and achieving high efficiency pure sulfide kesterite solar cells.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Cd‐Free Pure Sulfide Kesterite Cu2ZnSnS4 Solar Cell with Over 800 mV Open‐Circuit Voltage Enabled by Phase Evolution Intervention

Ao Wang,Jialiang Huang,Jialin Cong,Xiaojie Yuan,Mingrui He,Jianjun Li,Chang Yan,Xin Cui,Ning Song,Shujie Zhou,Martin A Green,Kaiwen Sun,Xiaojing Hao

DOI: https://doi.org/10.1002/adma.202307733

IF: 29.4

2023-10-19

Advanced Materials

Abstract:The Cd‐free Cu2ZnSnS4 (CZTS) solar cell is an ideal candidate for producing low‐cost clean energy through green materials owing to its inherent environmental friendliness and earth abundance. Nevertheless, sulfide CZTS has long suffered from severe open‐circuit voltage (VOC) deficits, limiting the full exploitation of performance potential and further progress. Here, we propose an effective strategy to alleviate the non‐radiative VOC loss by manipulating the phase evolution during the critical kesterite phase formation stage. With a Ge cap layer on the precursor, premature CZTS grain formation is suppressed at low temperatures, leading to fewer nucleation centers at the initial crystallization stage. Consequently, the CZTS grain formation and crystallization are deferred to high temperatures, resulting in enhanced grain interior quality and less unfavorable grain boundaries in the final film. As a result, a champion efficiency of 10.7% for Cd‐free CZTS solar cells with remarkably high VOC beyond 800 mV (63.2% Schockley‐Queisser limit) is realized, indicating that non‐radiative recombination is effectively inhibited. This strategy may advance other compound semiconductors seeking high‐quality crystallization. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Gradient bandgap enables >13% efficiency sulfide Kesterite solar cells with open-circuit voltage over 800 mV

Kang Yin,Jinlin Wang,Licheng Lou,Xiao Xu,Bowen Zhang,Menghan Jiao,Jiangjian Shi,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng

2024-03-30

Abstract:Sulfide Kesterite Cu2ZnSnS4 (CZTS), a nontoxic and low-cost photovoltaic material, has always being facing severe charge recombination and poor carrier transport, resulting in the cell efficiency record stagnating around 11% for years. Gradient bandgap is a promising approach to relieve these issues, however, has not been effectively realized in Kesterite solar cells due to the challenges in controlling the gradient distribution of alloying elements at high temperatures. Herein, targeting at the Cd alloyed CZTS, we propose a pre-crystallization strategy to reduce the intense vertical mass transport and Cd rapid diffusion in the film growth process, thereby realizing front Cd-gradient CZTS absorber. The Cd-gradient CZTS absorber, exhibiting downward bending conduction band structure, has significantly enhanced the minority carrier transport and additionally improved band alignment and interface property of CZTS/CdS heterojunction. Ultimately, we have achieved a champion total-area efficiency of 13.5% (active-area efficiency: 14.1%) in the cell and in particular a high open-circuit voltage of >800 mV. We have also achieved a certified total-area cell efficiency of 13.16%, realizing a substantial step forward for the pure sulfide Kesterite solar cell.

Materials Science,Applied Physics
Highly efficient, ultrathin, Cd-free kesterite solar cells in superstrate configuration enabled by band level tuning via Ag incorporation

Zhuoran Wang,Yongjie Wang,Gerasimos Konstantatos

DOI: https://doi.org/10.1016/j.nanoen.2021.106898

IF: 17.6

2022-04-01

Nano Energy

Abstract:Kesterite, or Cu2ZnSn(S,Se)4 (CZTS) is promising in developing sustainable PV technology due to its earth-abundant, non-toxic composition. However, issues including instability of interface, high density of defects that fails to allow the short charge-collection length to meet its light absorption needs, use of Cd that fails to comply with the restriction of hazardous substances (RoSH), are promoting the development of alternative, eco-friendly device structure. Here, this study reports an important progress on this subject by adopting the superstrate configuration to kesterite, thus to realize advantageous light management and high defect tolerance in an ultrathin device. By incorporating Ag in kesterite to overcome the detrimental alignment at the pristine interface, a solar cell with PCE of 8.1% has been fabricated with ~ 200 nm absorber and ~ 15 nm TiO2 buffer, representing a PCE improvement of nearly three-fold from the baseline Cu2ZnSn(S,Se)4 device and breaking the 5% PCE limit for superstrate kesterite cells to date. Moreover, this enables the sole use of TiO2 as novel buffer material free of toxic Cd. Further analysis reveals the critical role of Ag in synergistically tailoring band offset and bandgap, along with largely reduced density of defects, leading to this substantial performance improvement.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Over 10% Efficient Cu2CdSnS4 Solar Cells Fabricated from Optimized Sulfurization

Ping Fan,Jinhong Lin,Juguang Hu,Zixuan Yu,Yunhai Zhao,Shuo Chen,Zhuanghao Zheng,Jingting Luo,Guangxing Liang,Zhenghua Su

DOI: https://doi.org/10.1002/adfm.202207470

IF: 19

2022-09-01

Advanced Functional Materials

Abstract:A new sulfurization configuration is elaborated, and suitable parameters are explored for the preparation of Cu2CdSnS4 thin films. Appropriate copper content can reduce the fluctuations of bandgap and electrostatic potential in Cu2CdSnS4 thin film. The best efficiency of Cu2CdSnS4 thin film solar cell can be found over 10% efficient under the ratio of 0.83 and 590 °C sulfurization temperature. At present, Kesterite‐based thin‐film solar cells, such as Cu2ZnSnS4 solar cells, involve serious band‐tailed states, which leads to low open‐circuit voltage, thereby hindering the further improvement of device performance. In stannite‐based materials, such as Cu2CdSnS4, the substitution of Zn with Cd can effectively suppress CuCd‐related point defects and defect clusters; thus, the band‐tailing state is few, which has attracted considerable research attention. In this work, on the basis of using optimized sulfurization and optimizing ratios (Cu/Cd+Sn) and temperatures, Cu2CdSnS4 thin films can be obtained with good quality and single‐phase composition, in which the device prepared at a ratio of 0.83 and 590 °C has the highest efficiency. Defect analysis shows that the substitution of Zn with Cd can effectively reduce CuCd‐related defects and defect clusters (such as 2CuCd+SnCd) and also decrease Urbach energy, fluctuations of bandgap, and electrostatic potential compared with kesterite‐based devices. In particular, Cu2CdSnS4 thin‐film solar cell prepared under optimized conditions (the ratio of 0.83 and 590 °C) has the minimum reverse saturation current, red shift, and the maximum minority carrier diffusion length. Therefore, an efficiency over 10% Cu2CdSnS4 thin‐film solar cell is reported, which shows the highest efficiency among stannite‐based solar cells to date.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
All-Layer Sputtering-Free Cu2Zn1-xCdxSnS4 Solar Cell with Efficiency Exceeding 7.5%

Youchen Gu,Xuewen Yin,Jianhua Han,Yu Zhou,Meidian Tai,Qi Zhang,Yangying Zhou,Jianbao Li,Hong Lin

DOI: https://doi.org/10.1002/slct.201900520

2019-01-01

ChemistrySelect

Abstract:Cu2ZnSnS4 (CZTS) is a promising photovoltaic material drawing worldwide attention due to its remarkable photovoltaic performance and earth-abundant element constitution, making it a good candidate for cost-effective photovoltaic application. The power conversion efficiency (PCE) of CZTS solar cell has been increasing rapidly during last few years. Although the photovoltaic materials can be synthesized and fabricated with solution-processed methods, the conventional CZTS solar cells still rely heavily on vacuum-based techniques such as sputtering, evaporating or electron-beam deposition, which however, make CZTS solar cells still costly. A few attempts on sputtering-free CZTS solar cells have been reported, yet for now their PCEs are lagging behind the leading edges. Here, we demonstrated a 7.5% efficient sputtering-free Cd-alloyed CZTS solar cells by using sulfur-free precursor recipe. This recipe is proven to modify the morphology of CZTS film, leading to enhanced crystallinity and absorber/buffer junction quality. The mechanism behind the above-mentioned improvements is that applying S powder-free recipe can eliminate the problem of initial elemental distribution inhomogeneity within ball-milling processed precursor film, promoting vertically aligned grain growth to form compact and flat absorber film. Our work shows the vital importance of tuning the proportion of sulfur within solution-processed precursor ink to achieve high-performance of sputtering-free CZTS solar cells.
A Strategy to Stabilize Kesterite Czts for High-Performance Solar Cells

Kuang Yu,Emily A. Carter

DOI: https://doi.org/10.1021/acs.chemmater.5b00172

IF: 10.508

2015-01-01

Chemistry of Materials

Abstract:Cu2ZnSnS4-xSex (CZTS) is an important semiconductor with significant potential for applications in the next generation of solar cells. CZTS has an optimal band gap (similar to 1.5 eV) and contains no expensive or toxic elements. However, CZTS-based solar cells suffer from low efficiency because of poor crystal quality, which is partly caused by secondary phase formation during synthesis. We use density functional theory+U calculations to systematically investigate the stabilities of three CZTS phases: kesterite, stannite, and wurtzite. In agreement with previous experiment and theory, we confirm that these three phases have very similar formation energies. This finding is consistent with the known difficulties in synthesizing pure kesterite CZTS, the phase that is desirable for photovoltaic applications. To overcome this problem, we characterize surfaces and interfaces of CZTS and are able to identify certain "beneficial surfaces" that could be exploited to potentially provide extra stability for the kesterite phase. We propose the zinc blende ZnS (001) surface as a substrate to induce formation of these beneficial surfaces and to stabilize the kesterite phase, thereby serving as an effective crystallization template for the fabrication of high-performance CZTS solar cells.
Defect Control for 12.5% Efficiency Cu2 ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

Jianjun Li,Yanchan Huang,Jialiang Huang,Guangxing Liang,Yunxiang Zhang,Germain Rey,Fei Guo,Zhenghua Su,Hongbing Zhu,Lele Cai,Kaiwen Sun,Yun Sun,Fangyang Liu,Shiyou Chen,Xiaojing Hao,Yaohua Mai,Martin A Green

DOI: https://doi.org/10.1002/adma.202005268

Abstract:Kesterite-based Cu2 ZnSn(S,Se)4 semiconductors are emerging as promising materials for low-cost, environment-benign, and high-efficiency thin-film photovoltaics. However, the current state-of-the-art Cu2 ZnSn(S,Se)4 devices suffer from cation-disordering defects and defect clusters, which generally result in severe potential fluctuation, low minority carrier lifetime, and ultimately unsatisfactory performance. Herein, critical growth conditions are reported for obtaining high-quality Cu2 ZnSnSe4 absorber layers with the formation of detrimental intrinsic defects largely suppressed. By controlling the oxidation states of cations and modifying the local chemical composition, the local chemical environment is essentially modified during the synthesis of kesterite phase, thereby effectively suppressing detrimental intrinsic defects and activating desirable shallow acceptor Cu vacancies. Consequently, a confirmed 12.5% efficiency is demonstrated with a high VOC of 491 mV, which is the new record efficiency of pure-selenide Cu2 ZnSnSe4 cells with lowest VOC deficit in the kesterite family by Eg /q-Voc. These encouraging results demonstrate an essential route to overcome the long-standing challenge of defect control in kesterite semiconductors, which may also be generally applicable to other multinary compound semiconductors.
Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Zuoyun Wang,Rutao Meng,Hongling Guo,Yali Sun,Yue Liu,Huamei Zhang,Zixiu Cao,Jiabin Dong,Xuejun Xu,Guangxing Liang,Licheng Lou,Dongmei Li,Qingbo Meng,Yi Zhang

DOI: https://doi.org/10.1002/smll.202300634

IF: 13.3

Small

Abstract:Increasing the fill factor (FF) and the open-circuit voltage (VOC ) simultaneously together with non-decreased short-circuit current density (JSC ) are a challenge for highly efficient Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells. Aimed at such target in CZTSSe solar cells, a synergistic strategy to tailor the recombination in the bulk and at the heterojunction interface has been developed, consisting of atomic-layer deposited aluminum oxide (ALD-Al2 O3 ) and (NH4 )2 S treatment. With this strategy, deep-level CuZn defects are converted into shallower VCu defects and improved crystallinity, while the surface of the absorber is optimized by removing Zn- and Sn-related impurities and incorporating S. Consequently, the defects responsible for recombination in the bulk and at the heterojunction interface are effectively passivated, thereby prolonging the minority carrier lifetime and increasing the depletion region width, which promote carrier collection and reduce charge loss. As a consequence, the VOC deficit decreases from 0.607 to 0.547 V, and the average FF increases from 64.2% to 69.7%, especially, JSC does not decrease. Thus, the CZTSSe solar cell with the remarkable efficiency of 13.0% is fabricated. This study highlights the increased FF together with VOC simultaneously to promote the efficiency of CZTSSe solar cells, which could also be applied to other photoelectronic devices.
Cadmium‐Free Kesterite Thin‐Film Solar Cells with High Efficiency Approaching 12%

Nafees Ahmad,Yunhai Zhao,Fan Ye,Jun Zhao,Shuo Chen,Zhuanghao Zheng,Ping Fan,Chang Yan,Yingfen Li,Zhenghua Su,Xianghua Zhang,Guangxing Liang

DOI: https://doi.org/10.1002/advs.202302869

IF: 15.1

2023-07-01

Advanced Science

Abstract:Eco‐friendly ZTO buffer layer is demonstrated in Ag‐doped‐CZTSSe thin film solar cells. Benefiting from the high transparency, wide bandgap of ZTO, and the favorable band alignment at the ZTO/Ag‐CZTSSe heterojunction effectively suppress interface recombination and improve the photovoltaic parameters thus the champion device exhibits 11.8% efficiency, which is the highest efficiency for Cd‐free kesterite thin film solar cells. Cadmium sulfide (CdS) buffer layer is commonly used in Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. However, the toxicity of Cadmium (Cd) and perilous waste, which is generated during the deposition process (chemical bath deposition), and the narrow bandgap (≈2.4 eV) of CdS restrict its large‐scale future application. Herein, the atomic layer deposition (ALD) method is proposed to deposit zinc–tin‐oxide (ZTO) as a buffer layer in Ag‐doped CZTSSe solar cells. It is found that the ZTO buffer layer improves the band alignment at the Ag‐CZTSSe/ZTO heterojunction interface. The smaller contact potential difference of the ZTO facilitates the extraction of charge carriers and promotes carrier transport. The better p–n junction quality helps to improve the open‐circuit voltage (VOC) and fill factor (FF). Meanwhile, the wider bandgap of ZTO assists to transfer more photons to the CZTSSe absorber, and more photocarriers are generated thus improving short‐circuit current density (Jsc). Ultimately, Ag‐CZTSSe/ZTO device with 10 nm thick ZTO layer and 5:1 (Zn:Sn) ratio, Sn/(Sn + Zn): 0.28 deliver a superior power conversion efficiency (PCE) of 11.8%. As far as it is known that 11.8% is the highest efficiency among Cd‐free kesterite thin film solar cells.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Defect Control for 12.5% Efficiency Cu2ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment

Jianjun Li,Yanchan Huang,Jialiang Huang,Guangxing Liang,Yunxiang Zhang,Germain Rey,Fei Guo,Zhenghua Su,Hongbing Zhu,Lele Cai,Kaiwen Sun,Yun Sun,Fangyang Liu,Shiyou Chen,Xiaojing Hao,Yaohua Mai,Martin A. Green

DOI: https://doi.org/10.1002/adma.202005268

IF: 29.4

2020-01-01

Advanced Materials

Abstract:Kesterite‐based Cu2ZnSn(S,Se)4 semiconductors are emerging as promising materials for low‐cost, environment‐benign, and high‐efficiency thin‐film photovoltaics. However, the current state‐of‐the‐art Cu2ZnSn(S,Se)4 devices suffer from cation‐disordering defects and defect clusters, which generally result in severe potential fluctuation, low minority carrier lifetime, and ultimately unsatisfactory performance. Herein, critical growth conditions are reported for obtaining high‐quality Cu2ZnSnSe4 absorber layers with the formation of detrimental intrinsic defects largely suppressed. By controlling the oxidation states of cations and modifying the local chemical composition, the local chemical environment is essentially modified during the synthesis of kesterite phase, thereby effectively suppressing detrimental intrinsic defects and activating desirable shallow acceptor Cu vacancies. Consequently, a confirmed 12.5% efficiency is demonstrated with a high VOC of 491 mV, which is the new record efficiency of pure‐selenide Cu2ZnSnSe4 cells with lowest VOC deficit in the kesterite family by Eg/q‐Voc. These encouraging results demonstrate an essential route to overcome the long‐standing challenge of defect control in kesterite semiconductors, which may also be generally applicable to other multinary compound semiconductors.
Elemental de-mixing-induced epitaxial kesterite/CdS interface enabling 13%-efficiency kesterite solar cells

Yuancai Gong,Qiang Zhu,Bingyan Li,Shanshan Wang,Biwen Duan,Licheng Lou,Chunxu Xiang,Erin Jedlicka,Rajiv Giridharagopal,Yage Zhou,Qi Dai,Weibo Yan,Shiyou Chen,Qingbo Meng,Hao Xin

DOI: https://doi.org/10.1038/s41560-022-01132-4

IF: 56.7

2022-10-07

Nature Energy

Abstract:The conversion efficiency of kesterite solar cells has been stagnated at 12.6% since 2013. In contrast to chalcopyrite solar cells, the performance of kesterite solar cells is seriously limited by heterojunction interface recombination. Here we demonstrate kesterite/CdS heterojunction is constructed on a Zn-poor surface due to the dissolution of Zn 2+ during chemical bath deposition. The occupation of Cd 2+ on the Zn site and re-deposition of Zn 2+ into CdS creates a defective and lattice-mismatched interface. Low-temperature annealing of the kesterite/CdS junction drives migration of Cd 2+ from absorber back to CdS and Zn 2+ from absorber bulk to surface, achieving a gradient composition and reconstructing an epitaxial interface. This greatly reduces interface recombination and improves device open-circuit voltage and fill factor. We achieve certified 12.96% efficiency small-area (0.11 cm 2 ) and certified 11.7% efficiency large-area (1.1 cm 2 ) kesterite devices. The findings are expected to advance the development of kesterite solar cells.

materials science, multidisciplinary,energy & fuels
Multinary alloying for facilitated cation exchange and suppressed defect formation in kesterite solar cells with above 14% certified efficiency

Jiangjian Shi,Jinlin Wang,Fanqi Meng,Jiazheng Zhou,Xiao Xu,Kang Yin,Licheng Lou,Menghan Jiao,Bowen Zhang,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng

DOI: https://doi.org/10.1038/s41560-024-01551-5

IF: 56.7

2024-05-31

Nature Energy

Abstract:Kesterite Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cells are highly promising low-cost thin-film photovoltaics. However, the efficiency of these solar cells is challenged by severe charge losses and complex defects. Here we reveal through a data-driven correlation analysis that the dominant deep defect in CZTSSe exhibits a donor character. We further propose that incomplete cation exchange in the multi-step crystallization reactions of CZTSSe is the kinetic mechanism responsible for the defect formation. To facilitate the cation exchange, we introduce a multi-elemental alloying approach aimed at weakening the metal–chalcogen bond strength and the stability of intermediate phases. This strategy leads to a significant reduction in charge losses within the CZTSSe absorber and to a total-area cell efficiency of 14.6% (certified at 14.2%). Overall, these results not only present a significant advancement for kesterite solar cells but could also help identify and regulate defects in photovoltaic materials.

materials science, multidisciplinary,energy & fuels
Structural, Electronic and Defect Properties of Cu 2 ZnSn(S,Se) 4 Alloys

East China Normal University,Gong Xin-Gao,Walsh Aron,Wei Su-Huai

DOI: https://doi.org/10.1557/opl.2011.764

2011-01-01

Abstract:Kesterite Cu 2 ZnSnS 4 (CZTS) and Cu 2 ZnSnSe 4 (CZTSe) compounds are candidate low-cost absorber materials for thin-film solar cells, and a light-to-electricity efficiency as high as ~10% has been achieved in the solar cell based on their alloys, Cu 2 ZnSn(S,Se) 4 (CZTSSe). In this paper, we discuss the crystal and electronic structure of CZTSSe alloys with different composition, showing that the mixed-anion alloys keep the kesterite cation ordering, and are highly miscible with a small band gap bowing parameter. The phase stability of CZTS and CZTSe relative to secondary compounds such as ZnS and Cu 2 SnS 3 has also been studied, showing that chemical potential control is important for growing high-quality crystals, and the coexistence of these secondary compounds is difficult to be excluded using X-ray diffraction technique. Both CZTS and CZTSe are self-doped to p-type by their intrinsic defects, and the acceptor level of the dominant Cu Zn antisite is deeper than Cu vacancy. Relatively speaking, CZTSe has shallower acceptor level and easier n-type doping than CZTS, which gives an explanation to the high efficiency of CZTSSe based solar cells.
Beyond 11% Efficient Cu2ZnSn(Se,S)(4) Thin Film Solar Cells by Cadmium Alloying

Rujun Sun,Daming Zhuang,Ming Zhao,Qianming Gong,Mike Scarpulla,Yaowei Wei,Guoan Ren,Yixuan Wu

DOI: https://doi.org/10.1016/j.solmat.2017.09.043

IF: 6.9

2018-01-01

Solar Energy Materials and Solar Cells

Abstract:Cd-alloying CZTSSe (sulfur about 1%) film was prepared by selenizing CZTS precursor with CdS on the top. The XRD and Raman spectra indicated that Cd alloyed into CZTSSe lattice and the calculated Cd/(Cd+Zn) ratio was 0.13. Some small grains with increased Sn/Cu ratio existed near back contact. Grain growth enhanced after Cd alloying, resulting in a more homogenous Sn/Cu ratio along thickness direction. SIMS profile of solar cell confirmed Cd incorporation in bulk while also a higher Cd content near absorber surface. Corresponding to microstructure, electrical properties were also modified by Cd alloying. In the absorber bulk, the trap energy levels and density of Cd-alloying sample were 38meV and 1.47 ×1016cm−3, while 118meV and 6.98 ×1015cm−3 for reference sample. The dominant recombination was in bulk, instead of at interface as in reference sample. Back contact was improved owing to a smaller series resistance and a smaller rise of Rs at low temperature. J-V curve observed an improvement of Voc and Jsc. The EQE curve indicated sharper absorption edges and band gap reducing from 1.00eV to 0.95eV. As a consequence, a highest efficiency of 11.2% for CZTSSe solar cells was achieved.
Cu2ZnSnS4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment

Chang Yan,Jialiang Huang,Kaiwen Sun,Steve Johnston,Yuanfang Zhang,Heng Sun,Aobo Pu,Mingrui He,Fangyang Liu,Katja Eder,Limei Yang,Julie M. Cairney,N. J. Ekins-Daukes,Ziv Hameiri,John A. Stride,Shiyou Chen,Martin A. Green,Xiaojing Hao

DOI: https://doi.org/10.1038/s41560-018-0206-0

IF: 56.7

2018-07-23

Nature Energy

Abstract:Sulfide kesterite Cu2ZnSnS4 provides an attractive low-cost, environmentally benign and stable photovoltaic material, yet the record power conversion efficiency for such solar cells has been stagnant at around 9% for years. Severe non-radiative recombination within the heterojunction region is a major cause limiting voltage output and overall performance. Here we report a certified 11% efficiency Cu2ZnSnS4 solar cell with a high 730 mV open-circuit voltage using heat treatment to reduce heterojunction recombination. This heat treatment facilitates elemental inter-diffusion, directly inducing Cd atoms to occupy Zn or Cu lattice sites, and promotes Na accumulation accompanied by local Cu deficiency within the heterojunction region. Consequently, new phases are formed near the hetero-interface and more favourable conduction band alignment is obtained, contributing to reduced non-radiative recombination. Using this approach, we also demonstrate a certified centimetre-scale (1.11 cm2) 10% efficiency Cu2ZnSnS4 photovoltaic device; the first kesterite cell (including selenium-containing) of standard centimetre-size to exceed 10%.

materials science, multidisciplinary,energy & fuels
Structural, Electronic and Defect Properties of Cu2ZnSn(S,Se)4 Alloys

Shiyou Chen,Xin-Gao Gong,Aron Walsh,Su-Huai Wei

DOI: https://doi.org/10.1557/opl.2011.764

2011-01-01

MRS Proceedings

Abstract:Kesterite Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) compounds are candidate low-cost absorber materials for thin-film solar cells, and a light-to-electricity efficiency as high as ~10% has been achieved in the solar cell based on their alloys, Cu2ZnSn(S,Se)4 (CZTSSe). In this paper, we discuss the crystal and electronic structure of CZTSSe alloys with different composition, showing that the mixed-anion alloys keep the kesterite cation ordering, and are highly miscible with a small band gap bowing parameter. The phase stability of CZTS and CZTSe relative to secondary compounds such as ZnS and Cu2SnS3 has also been studied, showing that chemical potential control is important for growing high-quality crystals, and the coexistence of these secondary compounds is difficult to be excluded using X-ray diffraction technique. Both CZTS and CZTSe are self-doped to p-type by their intrinsic defects, and the acceptor level of the dominant CuZn antisite is deeper than Cu vacancy. Relatively speaking, CZTSe has shallower acceptor level and easier n-type doping than CZTS, which gives an explanation to the high efficiency of CZTSSe based solar cells.
Impact of Cation Substitution in (Ag x Cu 1− x ) 2 ZnSnSe 4 Absorber‐Based Solar Cells toward 10% Efficiency: Experimental and Theoretical Analyses

Shaham Quadir,Mohammad Qorbani,Ying-Ren Lai,Amr Sabbah,Ho–Thi Thong,Michitoshi Hayashi,Cheng–Ying Chen,Kuei–Hsien Chen,Li–Chyong Chen

DOI: https://doi.org/10.1002/solr.202100441

IF: 9.1726

2021-08-06

Solar RRL

Abstract:Solar cells based on kesterite Cu2ZnSnSe4 (CZTSe) compounds with earth–abundant elements are highly desirable for the low–cost and high–efficiency production of renewable energy. However, the occurrence of intrinsic defects substantially impairs the photovoltaic properties of CZTSe. In this work, we introduce a cation substitution method to control and passivate the defect states in bandgap of kesterite CZTSe by incorporating Ag ions. Intensity–dependent low–temperature photoluminescence measurements show that Ag incorporation could reduce the density and depth of intrinsic defects in CZTSe. The results reveal that 10% Ag-alloyed CZTSe, provides the shallowest defect states and less non–radiative recombination. It is also confirmed by first–principles calculations that Ag incorporation enables the formation and suppresses the beneficial and detrimental defects, respectively. Based on the theoretical results, the observed sub–band photoluminescence peaks could be assigned to the intrinsic point and cluster defects. The best power conversion efficiency of 10.2% is achieved for the 10%–Ag–alloyed CZTSe cell, along with an enhanced open–circuit voltage. These results open up a new avenue for further improving the performances of CZTSe–based device via defect engineering.This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

Yuancai Gong,Ruichan Qiu,Chuanyou Niu,Junjie Fu,Erin Jedlicka,Rajiv Giridharagopal,Qiang Zhu,Yage Zhou,Weibo Yan,Shaotang Yu,Jingjing Jiang,Sixin Wu,David S. Ginger,Wei Huang,Hao Xin

DOI: https://doi.org/10.1002/adfm.202101927

IF: 19

2021-04-15

Advanced Functional Materials

Abstract:The large open-circuit voltage deficit (Voc,def) is the key issue that limits kesterite (Cu2ZnSn(S,Se)4, [CZTSSe]) solar cell performance. Substitution of Cu+ by larger ionic Ag+ ((Ag,Cu)2ZnSn(S,Se)4, [ACZTSSe]) is one strategy to reduce Cu–Zn disorder and improve kesterite Voc. However, the so far reported ACZTSSe solar cell has not demonstrated lower Voc,def than the world record device, indicating that some intrinsic defect properties cannot be mitigated using current approaches. Here, incorporation of Ag into kesterite through a dimethyl sulfoxide (DMSO) solution that can facilitate direct phase transformation grain growth and produce a uniform and less defective kesterite absorber is reported. The same coordination chemistry of Ag+ and Cu+ in the DMSO solution results in the same reaction path of ACZTSSe to CZTSSe, resulting in significant suppression of CuZn defects, its defect cluster [2CuZn + SnZn], and deep level defect CuSn. A champion device with an efficiency of 12.5% (active area efficiency 13.5% without antireflection coating) and a record low Voc,def (64.2% Shockley–Queisser limit) is achieved from ACZTSSe with 5% Ag content.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells

Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng

DOI: https://doi.org/10.1016/j.scib.2020.01.005

2019-11-14

Abstract:Aqueous precursors provide an alluring approach for low-cost and environmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. The key is to find an appropriate molecular agent to prepare a stable solution and optimize the coordination structure to facilitate the subsequent crystallization process. Herein, we introduce thioglycolic acid, which possesses strong coordination (-SH) and hydrophilic (-COOH) groups, as the agent and use deprotonation to regulate the coordination competition within the aqueous solution. Ultimately, metal cations are adequately coordinated with thiolate anions, and carboxylate anions are released to become hydrated to form an ultrastable aqueous solution. These factors have contributed to achieving CZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiency of 12.0%) and providing an extremely wide time window for precursor storage and usage. This work represents significant progress in the non-toxic solution fabrication of CZTSSe solar cells and holds great potential for the development of CZTSSe and other metal sulfide solar cells.

Applied Physics,Materials Science

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Ag Incorporation with Controlled Grain Growth Enables 12.5% Efficient Kesterite Solar Cell with Open Circuit Voltage Reached 64.2% Shockley–Queisser Limit

Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells