Cu2ZnSn(S, Se)4 solar cell with slight band tailing states achieves 11.83% efficiency by selenizing sputtered Cu–Zn–Sn–S precursor

Guoan Ren,Daming Zhuang,Ming Zhao,Yaowei Wei,Yixuan Wu,Xinchen Li,Xunyan Lyu,Chen Wang,Yuxian Li

DOI: https://doi.org/10.1016/j.jpowsour.2020.228747

IF: 9.2

2020-12-01

Journal of Power Sources

Abstract:The large band tailing states are believed to be a key challenge resulting in large deficit of open-circuit voltage and limit the performances of promising Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In the study, an effective process is proposed to alleviate the harmful effects of band tailing states and fabricate high performance CZTSSe devices. Cu2ZnSnS4 (CZTS) precursors are sputtered by a CZTS quaternary target and then annealed under a H2Se-containing atmosphere at different temperatures. The phase transformation and grain growth of CZTSSe absorbers in selenization process is illustrated. At the annealing temperature of 500 °C, the best performance device with the efficiency of 11.83% is achieved. The excellent back contact interface and the slight band tailing effect of the champion device are demonstrated by the temperature-dependent J-V and external quantum efficiency (EQE) measurement. The photoluminescence (PL) spectrum illustrates that the donor–acceptor pair formed by charged defects is the dominant reason of band tailing effect.

energy & fuels,materials science, multidisciplinary,electrochemistry,chemistry, physical

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the open - circuit voltage (Voc) loss in Cu2ZnSn(S,Se)4 (CZTSSe) solar cells due to band - tail states, which limits the improvement of their performance. Specifically, the paper explores effective methods to reduce the harmful band - tail state effects by selenizing sputtered Cu - Zn - Sn - S precursors and fabricate high - performance CZTSSe devices. It is mentioned in the paper that large band - tail states are considered as one of the main challenges leading to a significant drop in the open - circuit voltage of CZTSSe solar cells, thereby limiting the performance of these potential materials. To alleviate this adverse effect, the authors propose an effective treatment method, that is, using an annealing process with an H2Se atmosphere to improve the quality of the CZTSSe absorption layer, thereby enhancing the overall performance of the solar cell. The experimental results show that at an annealing temperature of 500°C, the device with the best performance is obtained, and its efficiency reaches 11.83%. This achievement demonstrates that by optimizing process parameters, the influence of band - tail states can be significantly reduced, thereby improving the efficiency of CZTSSe solar cells.

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