Abstract:The tetraethyl orthosilicate is introduced into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si for fabrication of CZTSSe device, giving rise to favorable functions in terms of passivating SnZn defects and optimizing energy level alignment. Consequently, the CZTSSe device with 7% Si substitution acquires a PCE of 13.02% due to the enhancement of Voc. The SnZn defect passivation and heterojunction interface energetics‐modification are crucial for further improvement of open‐circuit voltage (Voc) and efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, a simple but effective cation substitution strategy is reported to promote the performance of CZTSSe devices by simultaneously modifying the absorber and heterojunction interface. This is achieved by introducing the organic silicon salt C8H20O4Si into CZTSSe precursor solution as a source of silicon to partially substitute Sn with Si. Systematic studies reveal that there are two mechanisms synergistically contributing to the increase of efficiency: 1) This strategy can passivate the undesired SnZn defect in CZTSSe absorber more efficiently, leading to at least one order of magnitude lower SnZn defect density and beneficial carrier transport properties; 2) After Si incorporation, the conduction band minimum of the CZTSSe is upshifted, thus enlarging the bandgap, which ultimately optimizes the energy level structure at the CdS/CZTSSe interface and reduces interfacial energy loss by decreasing the carrier transport barrier. Consequently, the CZTSSe device with 7% Si substitution delivers a satisfactory efficiency of 13.02% owing to an increase in Voc. It is hoped the Si substitution strategy reported here can provide inspiration for developing advanced CZTSSe devices with broad application prospects.

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

Formation of Alloyed Cu2CoxZn1-xSn(S,Se)4 Absorption Layer and Its Application in Solar Cells.

Formation of Alloyed Cu2Cox Zn1-x Sn(S,Se)4 Absorption Layer and Its Application in Solar Cells

Energy Band Alignment and Defect Synergistic Regulation Enable Air-Solution-Processed Kesterite Solar Cells with the Lowest VOC Deficit.

Achieving 11.23 % Efficiency in CZTSSe Solar Cells Via Defect Control and Interface Contact Optimization

Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells

SnS-induced Element Diffusion Simultaneous Optimization of Interface and Bulk Defects in High-Efficiency CZTSSe Solar Cells

Eliminating Cracking Morphology of Solution-Processed CZTSSe Absorbers by Sn-rich Composition Engineering

Passivation of Deep‐Level Defects through Chemical Environment Regulation for Efficient CZTSSe Solar Cells Based on Active Selenium Adsorption–Desorption Process

Heterojunction Reconstruction Via in Doping Towards High-Efficiency CZTSSe Solar Cells

High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Rational Defect Passivation of Cu2ZnSn(S,Se)4 Photovoltaics with Solution-Processed Cu2ZnSnS4:Na Nanocrystals.

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Ga3+‐Doping for over 12% Efficient Solar Cells

Defect-level Trap Optimization in Cu2ZnSn(S,Se)4 Photovoltaic Materials Via Sb3+-doping for over 13% Efficiency Solar Cells

Optimizing the properties of Cu2ZnSn(S,Se)4 solar cells via cationic substitution with trace Ca

High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells with Shallow Li Zn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment

Optimizing the Ratio of Sn4+ and Sn2+ in Cu2ZnSn(S,Se)4 Precursor Solution Via Air Environment for Highly Efficient Solar Cells

Realization of Grain Growth and Suppressed Bulk Defects for Efficient Solution-Processed Cu2ZnSn (S, Se)4 Solar Cells Via Co-Doping Strategy

Sb Doping Strategy to Promote Growth and Suppress Defects in Solution-Processed CZTSSe Solar Cells for Improved Optoelectronic Performance

Toward High Efficient Cu2 ZnSn(Sx ,Se1- x )4 Solar Cells: Break the Limitations of VOC and FF

Positive Role of Inhibiting CZTSSe Decomposition on Intrinsic Defects and Interface Recombination of 12.03% Efficient Kesterite Solar Cells